Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userLarge Area Fabrication of Semiconducting Phosphorene by Langmuir Blodgett Assembly
101
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Although a considerable number of solvent based methodologies have been developed for exfoliating black phosphorus, so far there are no reports on controlled organization of these exfoliated nanosheets on substrates. Here, for the first time to the best of our knowledge, a mixture of N-Methyl-2-pyrrolidone (NMP) and deoxygenated water is employed as a subphase in Langmuir Blodgett (LB) trough for assembling the nanosheets followed by their deposition on substrates and studied its field effect transistor (FET) characteristics. Electron microscopy reveals the presence of densely aligned, crystalline, ultra-thin sheets of pristine phosphorene having lateral dimensions larger than hundred of microns. Furthermore, these assembled nanosheets retain their electronic properties and show a high current modulation of 10^4 at room temperature in FET devices. The proposed technique provides semiconducting phosphorene thin films that are amenable for large area applications.
rate research
Read More
Single walled carbon nanotubes exhibit advanced electrical and surface properties useful for high performance nanoelectronics. Important to future manufacturing of nanotube circuits is large scale assembly of SWNTs into aligned forms. Despite progress in assembly and oriented synthesis, pristine SWNTs in aligned and close-packed form remain elusive and needed for high current, speed and density devices through collective operations of parallel SWNTs. Here, we develop a Langmuir Blodgett method achieving monolayers of aligned SWNTs with dense packing, central to which is a non covalent polymer functionalization by PmPV imparting high solubility and stability of SWNTs in an organic solvent DCE. Pressure cycling or annealing during LB film compression reduces hysteresis and facilitates high degree alignment and packing of SWNTs characterized by microscopy and polarized Raman spectroscopy. The monolayer SWNTs are readily patterned for device integration by microfabrication, enabling the highest currents 3mA through the narrowest regions packed with aligned SWNTs thus far.
A plethora of different morphologies are fabricated by the self assembly of molybdenum disulphide (MoS2) exfoliated flakes with the help of Langmuir-Blodgett (LB) technique at the liquid/air interface. The MoS2 flakes are chemically exfoliated in various solvents but their stable sheet like assembly on substrate is achieved only in case of the flakes exfoliated in dimethylformamide. The density of the monolayer sheets is finely controlled by the surface pressure while the stabilization of MoS2 LB film onto the water subphase results in its self assembly into diffusion limited cluster aggregates and fractals. We further demonstrate the effect of excitation on the emission of LB assembled MoS2 sheets which reveals the existence of a new exciton corresponding to 2.43 eV apart from the direct bandgap emission at 1.86 eV. Finally, field effect transistors are fabricated on SiO2/Si and a mobility of 7.4 cm2V-1s-1 with a current on-off ratio of 10^5 is obtained. This work provides a new approach for the systematic deposition of the solution processed exfoliated flakes on large scale as well as formation of pattern structures in a natural way.
This paper reports the pi-A isotherms and spectroscopic characteristics of mixed Langmuir and Langmuir-Blodgett (LB) films of non-amphiphilic carbazole (CA) molecules mixed with polymethyl methacrylate (PMMA) and stearic acid (SA). pi-A isotherm studies of mixed monolayer and as well as also the collapse pressure study of isotherms definitely conclude that CA is incorporated into PMMA and SA matrices. However CA is stacked in the PMMA/SA chains and forms microcrystalline aggregates as is evidenced from the scanning electron micrograph picture. Nature of these aggregated species in the mixed LB films has been revealed by UV-Vis absorption and fluorescence spectroscopic studies. The presence of two different kinds of band systems in the fluorescence spectra of the mixed LB films have been observed. This may be due to the formation of low dimensional aggregates in the mixed LB films. Intensity distribution of different band system is highly sensitive to the microenvironment of two different matrices as well as also on the film thickness
Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their conventional counterparts. As a consequence, the methods to enhance the carrier mobility of materials receive immense research interests due to their potential applications in more effective electronic devices and enrichment of more unusual phenomena. For instance, introducing a flat hexagonal boron nitride (h-BN) substrate to enhance the carrier mobility has been achieved experimentally. However, the underlying mechanics is not well understood. In this study, we estimate the carrier mobility of phosphorene on h-BN substrate (P/h-BN) within the framework of the phonon-limited scattering model at first-principles level. %Our results are generic. Besides high-$kappa$ dielectric property, h-BN also possesses excellent mechanical property of a high two-dimensional elastic modulus. The P/h-BN heterostructure inherits the high elastic modulus of h-BN, leading to an enhanced carrier mobility in phosphorene. Owing to the weak van der Waals interactions between the layers, the unique electronic properties of phosphorene are almost perfectly preserved near the Fermi level, guaranteeing the superior electronic transport in P/h-BN. Our findings offer a new perspective to improve the carrier mobility in phosphorene as well as other 2D materials based field effect transistors.
Two-dimensional crystals are an important class of materials for novel physics, chemistry, and engineering. Germanane (GeH), the germanium-based analogue of graphane (CH), is of particular interest due to its direct band gap and spin-orbit coupling. Here, we report the successful co-deposition growth of CaGe2 films on Ge(111) substrates by molecular beam epitaxy (MBE) and their subsequent conversion to germanane by immersion in hydrochloric acid. We find that the growth of CaGe2 occurs within an adsorption-limited growth regime, which ensures stoichiometry of the film. We utilize in situ reflection high energy electron diffraction (RHEED) to explore the growth temperature window and find the best RHEED patterns at 750 {deg}C. Finally, the CaGe2 films are immersed in hydrochloric acid to convert the films to germanane. Auger electron spectroscopy of the resulting film indicates the removal of Ca and RHEED patterns indicate a single-crystal film with in-plane orientation dictated by the underlying Ge(111) substrate. X-ray diffraction and Raman spectroscopy indicate that the resulting films are indeed germanane. Ex situ atomic force microscopy (AFM) shows that the grain size of the germanane is on the order of a few micrometers, being primarily limited by terraces induced by the miscut of the Ge substrate. Thus, optimization of the substrate could lead to the long-term goal of large area germanane films.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
