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Register a new userAnisotropy and interaction effects of strongly strained SrIrO3 thin films
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Magneto-transport properties of SrIrO$_3$ thin films epitaxially grown on SrTiO$_3$, using reactive RF sputtering, are investigated. A large anisotropy between the in-plane and the out-of-plane resistivities is found, as well as a signature of the substrate cubic to tetragonal transition. Both observations result from the structural distortion associated to the epitaxial strain. The low-temperature and field dependences of the Hall number are interpreted as due to the contribution of Coulomb interactions to weak localization, evidencing the strong correlations in this material. The introduction of a contribution from magnetic scatters, in the analysis of magnetoconductance in the weakly localized regime, is proposed as an alternative to an anomalously large temperature dependence of the Land{e} coefficient.
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5d transition-metal-based oxides display emergent phenomena due to the competition between the relevant energy scales of the correlation, bandwidth, and most importantly, the strong spin-orbit coupling (SOC). Starting from the prediction of novel oxide topological insulators in bilayer ABO3 (B = 5d elements) thin-film grown along the (111) direction, 5d-based perovskites (Pv) form a new paradigm in the thin-film community. Here, we reviewed the scientific accomplishments in Pv-SrIrO3 thin films, a popular candidate for observing non-trivial topological phenomena. Although the predicted topological phenomena are unknown, the Pv-SrIrO3 thin film shows many emergent properties due to the delicate interplay between its various degrees of freedom. These observations provide new physical insight and encourage further research on the design of new 5d-based heterostructures or superlattices for the observation of the hidden topological quantum phenomena in strong spin-orbit coupled oxides.
Iridate oxides display exotic physical properties that arise from the interplay between a large spin-orbit coupling and electron correlations. Here, we present a comprehensive study of the effects of hydrostatic pressure on the electronic transport properties of SrIrO3 (SIO), a system that has recently attracted a lot of attention as potential correlated Dirac semimetal. Our investigations on untwinned thin films of SIO reveal that the electrical resistivity of this material is intrinsically anisotropic and controlled by the orthorhombic distortion of the perovskite unit cell. These effects provide another evidence for the strong coupling between the electronic and lattice degrees of freedom in this class of compounds. Upon increasing pressure, a systematic increase of the transport anisotropies is observed. The anomalous pressure-induced changes of the resistivity cannot be accounted for by the pressure dependence of the density of the electron charge carriers, as inferred from Hall effect measurements. Moreover, pressure-induced rotations of the IrO6 octahedra likely occur within the distorted perovskite unit cell and affect electron mobility of this system.
A quantitative mathematical model for the critical thickness of strained epitaxial metal films is presented, at which the magnetic moment experiences a reorientation from in-plane to perpendicular magnetic anisotropy. The model is based on the minimum of the magnetic anisotropy energy with respect to the orientation of the magnetic moment of the film. Magnetic anisotropy energies are taken as the sum of shape anisotropy, magnetocrystalline anisotropy and magnetoelastic anisotropy, the two latter ones being present as constant surface and variable volume contributions. Other than anisotropy materials constants, readily available from literature, only information about the strain in the films for the determination of the magnetoelastic anisotropy energy is required. Application of the epitaxial Bain path allows to express the strain in the film in terms of substrate lattice constant and film lattice parameter, and thus to obtain an approximate closed expression for the reorientation thickness in terms of lattice mismatch. The model can predict the critical spin reorientation transition thickness with surprising accuracy.
Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T=T_Neel. Here, we investigate thin films of SmNiO_3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (T_Neel<T_MI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where T_Neel=T_MI is achieved, the paramagnetic insulating phase characteristic of the bulk compound is suppressed and the MIT becomes 1st order. Further increasing the in-plane compression of the SmNiO_3 lattice leads to the stabilization of a single metallic paramagnetic phase.
Due to the complex interplay of magnetic, structural, electronic, and orbital degrees of freedom, biaxial strain is known to play an essential role in the doped manganites. For coherently strained La(2/3)Ca(1/3)MnO(3) thin films grown on SrTiO(3) substrates, we measured the magnetotransport properties both parallel and perpendicular to the substrate and found an anomaly of the electrical transport properties. Whereas metallic behavior is found within the plane of biaxial strain, for transport perpendicular to this plane an insulating behavior and non-linear current-voltage characteristics (IVCs) are observed. The most natural explanation of this anisotropy is a strain induced transition from an orbitally disordered ferromagnetic state to an orbitally ordered state associated with antiferromagnetic stacking of ferromagnetic manganese oxide planes.
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