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High resolution transient and permanent spectral hole burning in Ce$^{3+}$:Y$_2$SiO$_5$ at liquid helium temperatures

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 Added by Adam Nilsson
 Publication date 2016
  fields Physics
and research's language is English




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We perform hole burning with a low drift stabilized laser within the zero phonon line of the 4f-5d transition in Ce$^{3+}$:Y$_2$SiO$_5$ at 2K. The narrowest spectral holes appear for small applied magnetic fields and are $6pm4$ MHz wide (FWHM). This puts an upper bound on the homogeneous linewidth of the transition to $3pm2$ MHz, which is close to lifetime limited. The spin level relaxation time is measured to $72pm21$ ms with a magnetic field of 10 mT. A slow permanent hole burning mechanism is observed. If the excitation frequency is not changed the fluorescence intensity is reduced by more than 50$%$ after a couple of minutes of continuous excitation. The spectral hole created by the permanent hole burning has a width in the tens of MHz range, which indicates that a trapping mechanism occurs via the 5d-state.



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We experimentally study a broadband implementation of the atomic frequency comb (AFC) rephasing protocol with a cryogenically cooled Pr$^{3+}$:Y$_2$SiO$_5$ crystal. To allow for storage of broadband pulses, we explore a novel regime where the input photonic bandwidth closely matches the inhomogeneous broadening of the material $(sim5,textrm{GHz})$, thereby significantly exceeding the hyperfine ground and excited state splitting $(sim10,textrm{MHz})$. Through an investigation of different AFC preparation parameters, we measure a maximum efficiency of $10%$ after a rephasing time of $12.5,$ns. With a suboptimal AFC, we witness up to 12 rephased temporal modes.
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