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Dirac semimetal phase in the hexagonal LiZnBi

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 Added by Wendong Cao
 Publication date 2016
  fields Physics
and research's language is English




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Based on first-principles calculations, we find that LiZnBi, a metallic hexagonal $ABC$ compound, can be driven into a Dirac semimetal with a pair of Dirac points by strain. The nontrivial topological nature of the strained LiZnBi is directly demonstrated by calculating its $mathbb{Z}_2$ index and the surface states, where the Fermi arcs are clearly observed. The low-energy states as well as topological properties are shown to be sensitive to the strain configurations. The finding of Dirac semimetal phase in LiZnBi may intrigue further researches on the topological properties of hexagonal $ABC$ materials and promote new practical applications.



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Dirac semimetal (DSM) hosts four-fold degenerate isolated band-crossing points with linear dispersion, around which the quasiparticles resemble the relativistic Dirac Fermions. It can be described by a 4 * 4 massless Dirac Hamiltonian which can be decomposed into a pair of Weyl points or gaped into an insulator. Thus, crystal symmetry is critical to guarantee the stable existence. On the contrary, by breaking crystal symmetry, a DSM may transform into a Weyl semimetal (WSM) or a topological insulator (TI). Here, by taking hexagonal LiAuSe as an example, we find that it is a starfruit shaped multiple nodal chain semimetal in the absence of spin-orbit coupling(SOC). In the presence of SOC, it is an ideal DSM naturally with the Dirac points locating at Fermi level exactly, and it would transform into WSM phase by introducing external Zeeman field or by magnetic doping with rare-earth atom Sm. It could also transform into TI state by breaking rotational symmetry. Our studies show that DSM is a critical point for topological phase transition, and the conclusion can apply to most of the DSM materials, not limited to the hexagonal material LiAuSe.
Using first-principles calculations we examine the band structures of ferromagnetic hexagonal manganites $mathrm{YXO_3}$ (X=V, Cr, Mn, Fe and Co) in the nonpolar nonsymmorphic $P6_3/mmc$ space group. For $mathrm{YVO_3}$ and $mathrm{YCrO_3}$ we find a band inversion near the Fermi energy that generates a nodal ring in the $k_z=0$ mirror plane. We perform a more detailed analysis for these compounds and predict the existence of the topological drumhead surface states. Finally, we briefly discuss the low-symmetry polar phases (space group $P6_3cm$) of these systems, and show they can undergo a $P6_3/mmc rightarrow P6_3cm$ transition by condensation of soft $K_3$ and $Gamma_2^-$ phonons. Based on our findings, stabilizing these compounds in the hexagonal phase could offer a promising platform for studying the interplay of topology and multiferroicity, and the coexistence of real-space and reciprocal-space topological protection in the same phase.
176 - Huinan Xia , Yang Li , Min Cai 2018
Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator phase. However, the 3D-to-2D crossover and the associated topological phase transition, which is valuable for understanding the topological quantum phases, remain unexplored. Here, we synthesize high-quality Na3Bi thin films with R3*R3 reconstruction on graphene, and systematically characterize their thickness-dependent electronic and topological properties by scanning tunneling microscopy/spectroscopy in combination with first-principles calculations. We demonstrate that Dirac gaps emerge in Na3Bi films, providing spectroscopic evidences of dimensional crossover from a 3D semimetal to a 2D topological insulator. Importantly, the Dirac gaps are revealed to be of sizable magnitudes on 3 and 4 monolayers (72 and 65 meV, respectively) with topologically nontrivial edge states. Moreover, the Fermi energy of a Na3Bi film can be tuned via certain growth process, thus offering a viable way for achieving charge neutrality in transport. The feasibility of controlling Dirac gap opening and charge neutrality enables realizing intrinsic high-temperature QSH effect in Na3Bi films and achieving potential applications in topological devices.
241 - Peizhe Tang , Quan Zhou , Gang Xu 2016
The analogues of elementary particles have been extensively searched for in condensed matter systems because of both scientific interests and technological applications. Recently massless Dirac fermions were found to emerge as low energy excitations in the materials named Dirac semimetals. All the currently known Dirac semimetals are nonmagnetic with both time-reversal symmetry $mathcal{T}$ and inversion symmetry $mathcal{P}$. Here we show that Dirac fermions can exist in one type of antiferromagnetic systems, where $mathcal{T}$ and $mathcal{P}$ are broken but their combination $mathcal{PT}$ is respected. We propose orthorhombic antiferromagnet CuMnAs as a candidate, analyze the robustness of the Dirac points with symmetry protections, and demonstrate its distinctive bulk dispersions as well as the corresponding surface states by emph{ab initio} calculations. Our results give a new route towards the realization of Dirac materials, and provide a possible platform to study the interplay of Dirac fermion physics and magnetism.
We report observations of magnetoresistance, quantum oscillations and angle-resolved photoemission in RhSb$_3$, a unfilled skutterudite semimetal with low carrier density. The calculated electronic band structure of RhSb$_3$ entails a $Z_2$ quantum number $ u_0=0, u_1= u_2= u_3=1$ in analogy to strong topological insulators, and inverted linear valence/conduction bands that touch at discrete points close to the Fermi level, in agreement with angle-resolved photoemission results. Transport experiments reveal an unsaturated linear magnetoresistance that approaches a factor of 200 at 60 T magnetic fields, and quantum oscillations observable up to 150~K that are consistent with a large Fermi velocity ($sim 1.3times 10^6$ ms$^{-1}$), high carrier mobility ($sim 14$ $m^2$/Vs), and small three dimensional hole pockets with nontrivial Berry phase. A very small, sample-dependent effective mass that falls as low as $0.015(7)$ bare masses scales with Fermi velocity, suggesting RhSb$_3$ is a new class of zero-gap three-dimensional Dirac semimetal.
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