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Register a new userGate-induced Gap in Bilayer Graphene Suppressed by Coulomb Repulsion
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We investigate the effect of on-site Coulomb repulsion $U$ on the band gap of the electrically gated bilayer graphene by employing coherent potential approximation in the paramagnetic state, based on an ionic two-layer Hubbard model. We find that, while either the on-site Coulomb repulsion $U$ or the external perpendicular electric field $E$ alone will favor a gapped state in the bilayer graphene, competition between them will surprisingly lead to a suppression of the gap amplitude. Our results can be applied to understand the discrepancies of gap size reported from optical and transport measurements, as well as the puzzling features observed in angular resolved photoemission spectroscopic study.
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Phonon dispersions generically display non-analytic points, known as Kohn anomalies, due to electron-phonon interactions. We analyze this phenomenon for a zone boundary phonon in undoped graphene. When electron-electron interactions with coupling constant $beta$ are taken into account, one observes behavior demonstrating that the electrons are in a critical phase: the phonon dispersion and lifetime develop power law behavior with $beta$ dependent exponents. The observation of this signature would allow experimental access to the critical properties of the electron state, and would provide a measure of its proximity to an excitonic insulating phase.
We explore the possibility of a Berezinskii-Kosterlitz-Thouless-like critical phase for the charge degrees of freedom in the intermediate-temperature regime between the charge-ordered and disordered phases in two-dimensional systems with competing short-range Coulomb repulsion. As the simplest example, we investigate the extended Hubbard model with on-site and nearest-neighbor Coulomb interactions on a triangular lattice at half filling in the atomic limit by using a classical Monte Carlo method, and find a critical phase, characterized by algebraic decay of the charge correlation function, belonging to the universality class of the two-dimensional XY model with a $mathbb{Z}_6$ anisotropy. Based on the results, we discuss possible conditions for the critical phase in materials.
We address the optical conductivity of undoped bilayer graphene in the presence of a finite bias voltage at finite temperature. The effects of gap parameter and stacking type on optical conductivity are discussed in the context of tight binding model Hamiltonian. Greens function approach has been implemented to find the behavior of optical conductivity of bilayer graphene within linear response theory. We have found the frequency dependence of optical conductivity for different values of gap parameter and bias voltage. Also the dependence of optical conductivity on the temperature has been investigated in details. A peak appears in the plot of optical conductivity versus frequency for different values of temperatures and bias voltage. Furthermore we find the frequency position of broad peak in optical conductivity goes to higher values with increase of gap parameter for both bernal and simple stacked bilayer graphenes.
We revisit the effect of local interactions on the quadratic band touching (QBT) of Bernal stacked bilayer graphene models using renormalization group (RG) arguments and quantum Monte Carlo simulations of the Hubbard model. We present an RG argument which predicts, contrary to previous studies, that weak interactions do not flow to strong coupling even if the free dispersion has a QBT. Instead they generate a linear term in the dispersion, which causes the interactions to flow back to weak coupling. Consistent with this RG scenario, in unbiased quantum Monte Carlo simulations of the Hubbard model we find compelling evidence that antiferromagnetism turns on at a finite $U/t$, despite the $U=0$ hopping problem having a QBT. The onset of antiferromagnetism takes place at a continuous transition which is consistent with a dynamical critical exponent $z=1$ as expected for 2+1 d Gross-Neveu criticality. We conclude that generically in models of bilayer graphene, even if the free dispersion has a QBT, small local interactions generate a Dirac phase with no symmetry breaking and that there is a finite-coupling transition out of this phase to a symmetry-broken state.
Coulomb drag between parallel quantum wells provides a uniquely sensitive measurement of electron correlations since the drag response depends on interactions only. Recently it has been demonstrated that a new regime of strong interactions can be accessed for devices consisting of two monlolayer graphene (MLG) crystals, separated by few layer hexagonal boron-nitride. Here we report measurement of Coulomb drag in a double bilayer graphene (BLG) stucture, where the interaction potential is anticipated to be yet further enhanced compared to MLG. At low temperatures and intermediate densities a new drag response with inverse sign is observed, distinct from the momentum and energy drag mechanisms previously reported in double MLG. We demonstrate that by varying the device aspect ratio the negative drag component can be suppressed and a response showing excellent agreement with the density and temperature dependance predicted for momentum drag in double BLG is found. Our results pave the way for pursuit of emergent phases in strongly interacting bilayers, such as the exciton condensate.
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