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Register a new userTemperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films
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Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 ${deg}$C range, with a R$_{ON}$/R$_{OFF}$ ratio of up to about 750 and critical transition temperature of 7-10 ${deg}$C. Electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO$_{2}$ sample processed with the 2 hr long anneal. Both the width and slope of the field induced MIT hysteresis were dependent upon the VO$_{2}$ crystalline quality.
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We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO2 films are preceded by the purely-electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (+/- 0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperature insulator-metal transition in this technologically-promising material.
We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase across the nanobeams produces an abrupt MIT and the individual roles of thermal and non-thermal effects in driving the transition are studied. Transport measurements at temperatures ($T$) far below the critical temperature ($T_c$) of MIT, in several nanoscale vanadium oxide devices, show that both $T$ and electric field play distinctly separate, but critical roles in inducing the MIT. Specifically, at $T << T_c$ electric field dominates the MIT through an avalanche-type process, whereas thermal effects become progressively critical as $T$ approaches $T_c$.
In vanadium dioxide, the interplay between coherent lattice transformation and electronic correlation drives an insulator-to-metal transition (IMT). This phase commutation can be triggered by temperature, pressure, doping or deposition of optical energy. Here we demonstrate that an atomically-strong terahertz electric field initiates a metastable ultrafast IMT in vanadium dioxide without a concomitant lattice transformation. The free-space terahertz field acts as off-resonant excitation with photon energy below the lattice phonons and the interband transitions. Differently from optical and infrared excitation, terahertz interaction leads to a full IMT by interband Zener tunneling with a negligible entropy deposition. In previous experiments the temporal dynamics of IMT in VO2 could be only indirectly inferred. We disentangle the electronic and lattice contributions to the IMT on a sub-picosecond timescale. Near the critical temperature the IMT becomes dissipative and the terahertz field concludes the lattice-assisted metallic nucleation initiated by heating. The method of strong-field induced phase transition presented here is applicable to a wide class of strongly correlated systems and will enable the discovery of novel metastable phases.
The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, the sphere temperatures were varied in a range between 100 and 200 Celsius. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.
We present a detailed infrared study of the insulator-to-metal transition (IMT) in vanadium dioxide (VO2) thin films. Conventional infrared spectroscopy was employed to investigate the IMT in the far-field. Scanning near-field infrared microscopy directly revealed the percolative IMT with increasing temperature. We confirmed that the phase transition is also percolative with cooling across the IMT. We present extensive near-field infrared images of phase coexistence in the IMT regime in VO2. We find that the coexisting insulating and metallic regions at a fixed temperature are static on the time scale of our measurements. A novel approach for analyzing the far-field and near-field infrared data within the Bruggeman effective medium theory was employed to extract the optical constants of the incipient metallic puddles at the onset of the IMT. We found divergent effective carrier mass in the metallic puddles that demonstrates the importance of electronic correlations to the IMT in VO2. We employ the extended dipole model for a quantitative analysis of the observed near-field infrared amplitude contrast and compare the results with those obtained with the basic dipole model.
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