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Register a new userMesoscopic electron focusing in topological insulators
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The particle wave duality sets a fundamental correspondence between optics and quantum mechanics. Within this framework, the propagation of quasiparticles can give rise to superposition phenomena which, like for electromagnetic waves, can be described by the Huygens principle. However, the utilization of this principle by means of propagation and manipulation of quantum information is limited by the required coherence in time and space. Here we show that in topological insulators, which in their pristine form are characterized by opposite propagation directions for the two quasiparticles spin channels, mesoscopic focusing of coherent charge density oscillations can be obtained at large nested segments of constant energy contours by magnetic surface doping. Our findings provide evidence of strongly anisotropic Dirac fermion-mediated interactions. Even more remarkably, the validity of our findings goes beyond topological insulators but applies for systems with spin orbit lifted degeneracy in general. It demonstrates how spin information can be transmitted over long distances, allowing the design of experiments and devices based on coherent quantum effects in this fascinating class of materials.
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Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels, with opposite spin, that are topologically protected from backscattering. Two basic features are supposed to confirm the existence of the ballistic edge channels in the submicrometer limit: the 4-terminal conductance is expected to be quantized at the universal value $2e^{2}/h$, and a nonlocal signal should appear due to a net current along the sample edge, carried by the helical states. On the other hand for longer channels the conductance has been found to deviate from the quantized value. This article reviewer the experimental and theoretical work related to the transport in two-dimensional topological insulators (2D-TI), based on HgTe quantum wells in zero magnetic field. We provide an overview of the basic mechanisms predicting a deviation from the quantized transport due to backscattering (accompanied by spin-flips) between the helical channels. We discuss the details of the model, which takes into account the edge and bulk contribution to the total current and reproduces the experimental results.
We studied the focusing effect of electron flow induced by a single p-n junction (PNJ) in three-dimensional topological insulator. It is found that the electrons flowing from the n region can be focused at the symmetric position in the p region, acting as a perfect Veselago lens, regardless whether the incident energy is within or beyond the bulk energy gap. In the former case, the focusing effect occurs only in the surfaces. While in the latter case, the focusing effect occurs beyond the surfaces. These results show that the focusing effect of electron flow is a general phenomenon. It means the negative refraction may arise in all materials that are described by the massive or massless Dirac equation of 2D or beyond 2D system. Furthermore, we also find the focusing effect is robust in resisting the moderate random disorders. Finally, in the presence of a weak perpendicular magnetic field, the focusing effect remains well except that the position of the focal point is deflected by the transverse Lorentz force. Due to the finite size effect, the position of focal point oscillates periodically with a period of Delta B.
One of the unique features of Dirac Fermions is pseudo-diffusive transport by evanescent modes at low Fermi energies when the disorder is low. At higher Fermi energies i.e. carrier densities, the electrical transport is diffusive in nature and the propagation occurs via plane-waves. In this study, we report the detection of such evanescent modes in the surface states of topological insulator through 1/f noise. While signatures of pseudo-diffusive transport have been seen experimentally in graphene, such behavior is yet to be observed explicitly in any other system with a Dirac dispersion. To probe this, we have studied 1/f noise in topological insulators as a function of gate-voltage, and temperature. Our results show a non-monotonic behavior in 1=f noise as the Fermi energy is varied, suggesting a crossover from pseudo-diffusive to diffusive transport regime in mesoscopic topological insulators. The temperature dependence of noise points towards conductance fluctuations from quantum interference as the dominant source of the noise in these samples.
We consider extended Hubbard models with repulsive interactions on a Honeycomb lattice and the transitions from the semi-metal phase at half-filling to Mott insulating phases. In particular, due to the frustrating nature of the second-neighbor repulsive interactions, topological Mott phases displaying the quantum Hall and the quantum spin Hall effects are found for spinless and spinful fermion models, respectively. We present the mean-field phase diagram and consider the effects of fluctuations within the random phase approximation (RPA). Functional renormalization group analysis also show that these states can be favored over the topologically trivial Mott insulating states.
We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for a breaking of inversion and time-reversal symmetries and takes into account random local potentials as well as the Zeeman and orbital effects of external magnetic fields, we compute the local density of states, the single-particle spectral function, and the conductance for a (contacted) slab geometry by numerically exact techniques based on kernel polynomial expansion and Greens function approaches. We show that bulk disorder refills the suface-state Dirac gap induced by a homogeneous magnetic field with states, whereas orbital (Peierls-phase) disorder perserves the gap feature. The former effect is more pronounced in weak TIs than in strong TIs. At moderate randomness, disorder-induced conducting channels appear in the surface layer, promoting diffusive metallicity. Random Zeeman fields rapidly destroy any conducting surface states. Imprinting quantum dots on a TIs surface, we demonstrate that carrier transport can be easily tuned by varying the gate voltage, even to the point where quasi-bound dot states may appear.
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