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Dual nature of magnetic dopants and competing trends in topological insulators

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 Added by Paolo Sessi
 Publication date 2016
  fields Physics
and research's language is English




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Topological insulators interacting with magnetic impurities have been reported to host several unconventional effects. These phenomena are described within the framework of gapping Dirac quasiparticles due to broken time-reversal symmetry. However, the overwhelming majority of studies demonstrate the presence of a finite density of states near the Dirac point even once Topological insulators become magnetic. Here, we map the response of topological states to magnetic impurities at the atomic scale. We demonstrate that magnetic order and gapless states can coexist. We show how this is the result of the delicate balance between two opposite trends, i.e. gap opening and emergence of a Dirac node impurity band, both induced by the magnetic dopants. Our results evidence a more intricate and rich scenario with respect to the once generally assumed, showing how different electronic and magnetic states may be generated and controlled in this fascinating class of materials.



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A topological insulator doped with random magnetic impurities is studied. The system is modelled by the Kane-Mele model with a random spin exchange between conduction electrons and magnetic dopants. The dynamical mean field theory for disordered systems is used to investigate the electron dynamics. The magnetic long-range order and the topological invariant are calculated within the mean field theory. They reveal a rich phase diagram, where different magnetic long-range orders such as antiferromagnetic or ferromagnetic one can exist in the metallic or insulating phases, depending on electron and magnetic impurity fillings. It is found that insulator only occurs at electron half filling, quarter filling and when electron filling is equal to magnetic impurity filling. However, non-trivial topology is observed only in half-filling antiferromagnetic insulator and quarter-filling ferromagnetic insulator. At electron half filling, the spin Hall conductance is quantized and it is robust against magnetic doping, while at electron quarter filling, magnetic dopants drive the ferromagnetic topological insulator to ferromagnetic metal. The quantum anomalous Hall effect is observed only at electron quarter filling and dense magnetic doping.
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