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Register a new userNMR experiments and electronic structure calculations in type-I BaAlGe clathrates
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We describe 27Al NMR experiments on Ba8AlxGe46-x type-I clathrates coupled with ab initio computational studies. For x=16, calculated spectra determined by the ab initio results gave good agreement with the measurements, with best-fitting configurations also corresponding to the computed lowest-energy atomic arrangements. Analysis of the NMR results showed that a distribution of Knight shifts dominates the central portion of the line. Computational results demonstrate that this stems from the large variation of carrier density on different sites. Al-deficient samples with x=12 and 13 exhibited a split central NMR peak, signaling two main local environments for Al ions, which we connected to the presence of vacancies. Modeling of the wide-line spectrum for x=12 indicates a configuration with more Al on the 24k site than for x=16. The results indicate the importance of nonbonding hybrids adjacent to the vacancies in the electronic structure near EF. We also address the static distortions from Pm-3n symmetry in these structures.
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Type-I clathrate compounds have attracted a great deal of interest in connection with the search for efficient thermoelectric materials. These compounds constitute networked cages consisting of nano-scale tetrakaidecahedrons (14 hedrons) and dodecahedrons (12 hedrons), in which the group 1 or 2 elements in the periodic table are encaged as the so-called rattling guest atom. It is remarkable that, though these compounds have crystalline cubic-structure, they exhibit glass-like phonon thermal conductivity over the whole temperature range depending on the states of rattling guest atoms in the tetrakaidecahedron. In addition, these compounds show unusual glass-like specific heats and THz-frequency phonon dynamics, providing a remarkable broad peak almost identical to those observed in topologically disordered amorphous materials or structural glasses, the so-called Boson peak. An efficient thermoelectric effect is realized in compounds showing these glass-like characteristics. This decade, a number of experimental works dealing with type-I clathrate compounds have been published. These are diffraction experiments, thermal and spectroscopic experiments in addition to those based on heat and electronic transport. These form the raw materials for this article based on advances this decade. The subject of this article involves interesting phenomena from the viewpoint of not only physics but also from the view point of the practical problem of elaborating efficient thermoelectric materials. This review presents a survey of a wide range of experimental investigations of type-I clathrate compounds, together with a review of theoretical interpretations of the peculiar thermal and dynamic properties observed in these materials.
Linear scaling methods, or O(N) methods, have computational and memory requirements which scale linearly with the number of atoms in the system, N, in contrast to standard approaches which scale with the cube of the number of atoms. These methods, which rely on the short-ranged nature of electronic structure, will allow accurate, ab initio simulations of systems of unprecedented size. The theory behind the locality of electronic structure is described and related to physical properties of systems to be modelled, along with a survey of recent developments in real-space methods which are important for efficient use of high performance computers. The linear scaling methods proposed to date can be divided into seven different areas, and the applicability, efficiency and advantages of the methods proposed in these areas is then discussed. The applications of linear scaling methods, as well as the implementations available as computer programs, are considered. Finally, the prospects for and the challenges facing linear scaling methods are discussed.
Atomic motion of guest atoms inside semiconducting clathrate cages is considered as an important source for the glasslike thermal behavior.69Ga and 71Ga Nuclear Magnetic Resonance (NMR) studies on type-I Ba8Ga16Sn30 show a clear low temperature relaxation peak attributed to the influence of Ba rattling dynamics on the framework-atom resonance, with a quadrupolar relaxation mechanism as the leading contribution. The data are analyzed using a two-phonon Raman process, according to a recent theory involving localized anharmonic oscillators. Excellent agreement is obtained using this model, with the parameters corresponding to a uniform array of localized oscillators with very large anharmonicity.
We present results of electronic band structure, Fermi surface and electron transport properties calculations in orthorhombic $n$- and $p$-type SnSe, applying Korringa-Kohn-Rostoker method and Boltzmann transport approach. The analysis accounted for temperature effect on crystallographic parameters in $Pnma$ structure as well as the phase transition to $CmCm$ structure at $T_csim 807 $K. Remarkable modifications of conduction and valence bands were notified upon varying crystallographic parameters within the structure before $T_c$, while the phase transition mostly leads to jump in the band gap value. The diagonal components of kinetic parameter tensors (velocity, effective mass) and resulting transport quantity tensors (electrical conductivity $sigma$, thermopower $S$ and power factor PF) were computed in wide range of temperature ($15-900 $K) and, hole ($p-$type) and electron ($n-$type) concentration ($10^{17}-10^{21}$ cm$^{-3}$). SnSe is shown to have strong anisotropy of the electron transport properties for both types of charge conductivity, as expected for the layered structure. In general, $p$-type effective masses are larger than $n$-type ones. Interestingly, $p$-type SnSe has strongly non-parabolic dispersion relations, with the pudding-mold-like shape of the highest valence band. The analysis of $sigma$, $S$ and PF tensors indicates, that the inter-layer electron transport is beneficial for thermoelectric performance in $n$-type SnSe, while this direction is blocked in $p$-type SnSe, where in-plane transport is preferred. Our results predict, that $n$-type SnSe is potentially even better thermoelectric material than $p$-type one. Theoretical results are compared with single crystal $p$-SnSe measurements, and good agreement is found.
A characteristic feature of the state-of-the-art of real-space methods in electronic structure calculations is the diversity of the techniques used in the discretization of the relevant partial differential equations. In this context, the main approaches include finite-difference methods, various types of finite-elements and wavelets. This paper reports on the results of several code development projects that approach problems related to the electronic structure using these three different discretization methods. We review the ideas behind these methods, give examples of their applications, and discuss their similarities and differences.
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