Do you want to publish a course? Click here

Large gap electron-hole superfluidity and shape resonances in coupled graphene nanoribbons

131   0   0.0 ( 0 )
 Added by Mohammad Zarenia
 Publication date 2016
  fields Physics
and research's language is English




Ask ChatGPT about the research

We predict enhanced electron-hole superfluidity in two coupled electron-hole armchair-edge terminated graphene nanoribbons separated by a thin insulating barrier. In contrast to graphene monolayers, the multiple subbands of the nanoribbons are parabolic at low energy with a gap between the conduction and valence bands, and with lifted valley degeneracy. These properties make screening of the electron-hole interaction much weaker than for coupled electron-hole monolayers, thus boosting the pairing strength and enhancing the superfluid properties. The pairing strength is further boosted by the quasi-one-dimensional quantum confinement of the carriers, as well as by the large density of states near the bottom of each subband. The latter magnifies the superfluid shape resonances caused by the quantum confinement. Several superfluid partial condensates are present for finite-width nanoribbons with multiple subbands. We find that superfluidity is predominately in the strongly-coupled BEC and BCS-BEC crossover regimes, with large superfluid gaps up to 100 meV and beyond. When the gaps exceed the subband spacing, there is significant mixing of the subbands, a rounding of the shape resonances, and a resulting reduction in the one-dimensional nature of the system.



rate research

Read More

We report quantum Monte Carlo evidence of the existence of large gap superfluidity in electron-hole double layers over wide density ranges. The superfluid parameters evolve from normal state to BEC with decreasing density, with the BCS state restricted to a tiny range of densities due to the strong screening of Coulomb interactions, which causes the gap to rapidly become large near the onset of superfluidity. The superfluid properties exhibit similarities to ultracold fermions and iron-based superconductors, suggesting an underlying universal behavior of BCS-BEC crossovers in pairing systems.
Superfluidity in e-h bilayers in graphene and GaAs has been predicted many times but not observed. A key problem is how to treat the screening of the Coulomb interaction for pairing. Different mean-field theories give dramatically different conclusions, and we test them against diffusion Monte-Carlo calculations. We get excellent agreement with the mean-field theory that uses screening in the superfluid state, but large discrepancies with the others. The theory predicts no superfluidity in existing devices and gives pointers for new devices to generate superfluidity.
We show how a superconducting region (S) sandwiched between two normal leads (N), in the presence of barriers, can act as a lens for propagating electron and hole waves by virtue of the so- called crossed Andreev reflection (CAR). The CAR process which is equivalent to the Cooper pair splitting into the two N electrodes provides a unique possibility of constructing entangled electrons in solid state systems. When electrons are locally injected from an N lead, due to the CAR and normal reflection of quasiparticles by the insulating barriers at the interfaces, sequences of electron and hole focuses are established inside another N electrode. This behavior originates from the change of momentum during electron-hole conversion beside the successive normal reflections of electrons and holes due to the barriers. The focusing phenomena studied here is fundamentally different from the electron focusing in other systems like graphene pn junctions. In particular due to the electron-hole symmetry of superconducting state, the focusing of electrons and holes are robust against thermal excitations. Furthermore the effect of superconducting layer width, the injection point position, and barriers strength is investigated on the focusing behavior of the junction. Very intriguingly, it is shown that by varying the barriers strength, one can separately control the density of electrons or holes at the focuses.
We report on the energy level alignment evolution of valence and conduction bands of armchair-oriented graphene nanoribbons (aGNR) as their band gap shrinks with increasing width. We use 4,4-dibromo-para-terphenyl as molecular precursor on Au(111) to form extended poly-para-phenylene nanowires, which can be fused sideways to form atomically precise aGNRs of varying widths. We measure the frontier bands by means of scanning tunneling spectroscopy, corroborating that the nanoribbons band gap is inversely proportional to their width. Interestingly, valence bands are found to show Fermi level pinning as the band gap decreases below a threshold value around 1.7 eV. Such behavior is of critical importance to understand the properties of potential contacts in graphene nanoribbon-based devices. Our measurements further reveal a particularly interesting system for studying Fermi level pinning by modifying an adsorbates band gap while maintaining an almost unchanged interface chemistry defined by substrate and adsorbate.
Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary by up to 30% for different localized states which must therefore be spread in position along the ribbon. A single-electron transistor is used to prove the addition of individual electrons to the localized states. In our sample the characteristic charging energy is of the order of 10 meV, the characteristic strength of the disorder potential of the order of 100 meV.
comments
Fetching comments Fetching comments
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا