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Register a new userNano-optical imaging of WSe2 waveguide modes revealing light-exciton interactions
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We report on nano-optical imaging study of WSe2 thin flakes with the scanning near-field optical microscopy (NSOM). The NSOM technique allows us to visualize in real space various waveguide photon modes inside WSe2. By tuning the excitation laser energy, we are able to map the entire dispersion of these waveguide modes both above and below the A exciton energy of WSe2. We found that all the modes interact strongly with WSe2 excitons. The outcome of the interaction is that the observed waveguide modes shift to higher momenta right below the A exciton energy. At higher energies, on the other hand, these modes are strongly damped due to adjacent B excitons or band edge absorptions. The mode-shifting phenomena are consistent with polariton formation in WSe2.
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Near-field optical microscopy can be used as a viable route to understand the nanoscale material properties below the diffraction limit. On the other hand, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are the materials of recent interest to study the spatial confinement of charge carriers, photon, and phonons. Heterostructures based on Mo or W based monolayer TMDs form type-II band alignment, and hence the optically excited carriers can be easily separated for applications pertaining to photonics and electronics. Mapping these spatially confined carriers or photons in a heterostructure with nanoscale resolution as well as their recombination behavior at the interfaces are necessary for the effective use of these materials in future high performance optoelectronics. We performed tip-enhanced photoluminescence (TEPL) imaging to increase the spatial resolution on multi-junction monolayer MoSe2-WSe2 lateral heterostructures grown by chemical vapor deposition (CVD) method. The near-field nano-PL emission map was used to distinguish the presence of distinct crystalline boundaries and the heterogeneities across the interfaces. This method significantly improves the nanoscale resolution of 2D materials, especially for understanding the PL emission properties at the vicinity of hetero-interfaces.
Several theoretical predictions have claimed that the neutral exciton of TMDCs splits into a transversal and longitudinal exciton branch, with the longitudinal one, which is the upper branch, exhibiting an extraordinary strong dispersion in the meV range within the light cone. Historically, this was linked for semiconductor quantum wells to strong far-field optical dipole coupling, or strong electronic long-range exchange interactions, describing two sides of the same coin. Recently, experiments utilizing Fourier-space spectroscopy have shown that the exciton (exciton-polariton) dispersion can indeed be measured for high-quality hexagonal-BN-encapsulated WSe2 monolayer samples and can confirm the energy scale. Here, the exciton fine-structures pseudo-spin and the valley polarization are investigated as a function of the centre-of-mass-momentum and excitation-laser detuning. For quasi-resonant excitation, a strong dispersion featuring a pronounced momentum-dependent helicity is observed. By increasing the excitation energy step-wise towards and then above the electronic band gap, the dispersion and the helicity systematically decrease due to contributions of incoherent excitons and emission from plasma. The decline of the helicity with centre-of-mass momentum can be phenomenologically modelled by the Maialle-Silva-Sham mechanism using the exciton splitting as the source of an effective magnetic field.
Coupling degrees of freedom of distinct nature plays a critical role in numerous physical phenomena. The recent emergence of layered materials provides a laboratory for studying the interplay between internal quantum degrees of freedom of electrons. Here, we report experimental signatures of new coupling phenomena connecting real spin with layer pseudospins in bilayer WSe2. In polarization-resolved photoluminescence measurements, we observe large spin orientation of neutral and charged excitons generated by both circularly and linearly polarized light, with a splitting of the trion spectrum into a doublet at large vertical electrical field. These observations can be explained by locking of spin and layer pseudospin in a given valley. Because up and down spin states are localized in opposite layers, spin relaxation is substantially suppressed, while the doublet emerges as a manifestation of electrically induced spin splitting resulting from the interlayer bias. The observed distinctive behavior of the trion doublet under circularly and linearly polarized light excitation further provides spectroscopic evidence of interlayer and intralayer trion species, a promising step toward optical manipulation in van der Waals heterostructures through the control of interlayer excitons.
We experimentally demonstrate hot exciton transport in h-BN encapsulated WSe2 monolayers via spatially and temporally resolved photoluminescence measurements at room temperature. We show that the nonlinear evolution of the mean squared displacement of the non-resonantly excited hot exciton gas is primarily due to the relaxation of its excess kinetic energy and is characterized by a density-dependent fast expansion that converges to a slower, constant rate expansion. We also observe saturation of the hot exciton gas expansion rate at high excitation densities due to the balance between Auger-assisted hot exciton generation and the phonon-assisted hot exciton relaxation processes.
We experimentally demonstrate time-resolved exciton propagation in a monolayer semiconductor at cryogenic temperatures. Monitoring phonon-assisted recombination of dark states, we find a highly unusual case of exciton diffusion. While at 5 K the diffusivity is intrinsically limited by acoustic phonon scattering, we observe a pronounced decrease of the diffusion coefficient with increasing temperature, far below the activation threshold of higher-energy phonon modes. This behavior corresponds neither to well-known regimes of semiclassical free-particle transport nor to the thermally activated hopping in systems with strong localization. Its origin is discussed in the framework of both microscopic numerical and semi-phenomenological analytical models illustrating the observed characteristics of nonclassical propagation. Challenging the established description of mobile excitons in monolayer semiconductors, these results open up avenues to study quantum transport phenomena for excitonic quasiparticles in atomically-thin van der Waals materials and their heterostructures.
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