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Register a new userKondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure
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We have measured the electrical resistivity of cerium monochalcogenices, CeS, CeSe, and CeTe, under high pressures up to 8 GPa. Pressure dependences of the antiferromagnetic ordering temperature $T_{N}$, crystal field splitting, and the $ln T$ anomaly of the Kondo effect have been studied to cover the whole region from the magnetic ordering regime at low pressure to the Fermi liquid regime at high pressure. $T_{N}$ initially increases with increasing pressure, and starts to decrease at high pressure as expected from the Doniachs diagram. Simultaneously, the $ln T$ behavior in the resistivity is enhanced, indicating the enhancement of the Kondo effect by pressure. It is also characteristic in CeX$_{c}$ that the crystal field splitting rapidly decreases at a common rate of $-12.2$ K/GPa. This leads to the increase in the degeneracy of the $f$ state and further enhancement of the Kondo effect. It is shown that the pressure dependent degeneracy of the $f$ state is a key factor to understand the pressure dependence of $T_{N}$, Kondo effect, magnetoresistance, and the peak structure in the temperature dependence of resistivity.
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We have measured resistivity as a function of temperature and pressure of Ti4O7 twinned crystals using different contact configurations. Pressures over 4kbar depress the localization of bipolarons and allow the study of the electrical conduction of the bipolaronic phase down to low temperatures. For pressures P > 40 kbar the bipolaron formation transition is suppressed and a nearly pressure independent behavior is obtained for the resistivity. We observed an anisotropic conduction. When current is injected parallel to the principal axis, a metallic conduction with interacting carrier effects is predominant. A superconducting state was not obtained down to 1.2 K, although evidences of the proximity of a quantum critical point were noticed. While when current is injected non-parallel to the crystals principal axis, we obtained a logarithmic divergence of the resistivity at low temperatures. For this case, our results for the high pressure regime can be interpreted in the framework of interacting carriers (polarons or bipolarons) scattered by Two Level Systems.
Based on a systematic analysis of the thermal evolution of the resistivities of Fe-based chalcogenides Fe$_{1+delta }$Te$_{1-x}X_{x}$ ($X$= Se, S), it is inferred that their often observed nonmetallic resistivities are related to a presence of two resistive channels: one is a high-temperature thermally-activated process while the other is a low-temperature log-in-$T$ process. On lowering temperature, there are often two metal-to-nonmetall crossover events: one from the high-$T$ thermally-activated nonmetallic regime into a metal-like phase and the other from the log-in-$T$ regime into a second metal-like phase. Based on these events, together with the magnetic and superconducting transitions, a phase diagram is constructed for each series. We discuss the origin of both processes as well as the associated crossover events. We also discuss how these resistive processes are being influenced by pressure, intercalation, disorder, doping, or sample condition and, in turn, how these modifications are shaping the associated phase diagrams.
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The metal to insulator transition in the charge transfer NiS{2-x}Se{x} compound has been investigated through infrared reflectivity. Measurements performed by applying pressure to pure NiS2 (lattice contraction) and by Se-alloying (lattice expansion) reveal that in both cases an anomalous metallic state is obtained. We find that optical results are not compatible with the linear Se-alloying vs Pressure scaling relation previously established through transport, thus pointing out the substantially different microscopic origin of the two transitions.
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