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On the nature of wettability of van der Waals heterostructures

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 Added by Kalon Gopinadhan
 Publication date 2015
  fields Physics
and research's language is English




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Wetting behaviour of surfaces is believed to be affected by van der Waals (vdW) forces, however, there is no clear demonstration of this. With the isolation of two-dimensional vdW layered materials it is possible to test this hypothesis. In this paper, we report the wetting behaviour of vdW heterostructures which include, chemical vapor deposition (CVD) grown graphene, molybdenum disulfide (MoS2) and tungsten disulfide (WS2) on few layers of hexagon boron nitride (h-BN) and SiO2/Si. Our study clearly shows that while this class of two-dimensional materials are not wetting transparent, there seems to be a significant amount of influence on their wetting properties by the underlying substrate due to dominant vdW forces. Contact angle measurements indicate that graphene and graphene-like layered transitional metal dichalcogenides invariably have intrinsically dispersive surfaces with a dominating London-vdW force-mediated wettability. Electric field controlled wetting studies of MoS2/WS2/SiO2/Si heterostructures were performed and no notable changes to the water contact angle was seen with applied voltage although two orders of magnitude change in resistance was observed. We postulate that the highly dispersive nature of these surfaces arising from the predominant London-vdW forces could be the reason for such observation.



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In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be dramatically changed by a moire pattern induced by twist angles between different layers. Such process is referred to as twistronics, where the tuning of twist angle can be realized through mechanical manipulation of 2D materials. Here we demonstrate an experimental technique that can achieve in situ dynamical rotation and manipulation of 2D materials in van der Waals heterostructures. Using this technique we fabricated heterostructures where graphene is perfectly aligned with both top and bottom encapsulating layers of hexagonal boron nitride. Our technique enables twisted 2D material systems in one single stack with dynamically tunable optical, mechanical, and electronic properties.
The interlayer coupling, which has a strong influence on the properties of van der Waals heterostructures, strongly depends on the interlayer distance. Although considerable theoretical interest has been demonstrated, experiments exploiting a variable interlayer coupling on nanocircuits are scarce due to the experimental difficulties. Here, we demonstrate a novel method to tune the interlayer coupling using hydrostatic pressure by incorporating van der Waals heterostructure based nanocircuits in piston-cylinder hydrostatic pressure cells with a dedicated sample holder design. This technique opens the way to conduct transport measurements on nanodevices under pressure using up to 12 contacts without constraints on the sample at fabrication level. Using transport measurements, we demonstrate that hexagonal boron nitride capping layer provides a good protection of van der Waals heterostructures from the influence of the pressure medium, and we show experimental evidence of the influence of pressure on the interlayer coupling using weak localization measurements on a TMDC/graphene heterostructure.
In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moire superlattice. While it is widely recognized that a moire superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moire potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moire potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications.
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In this article we review recent work on van der Waals (vdW) systems in which at least one of the components has strong spin-orbit coupling. We focus on a selection of vdW heterostructures to exemplify the type of interesting electronic properties that can arise in these systems. We first present a general effective model to describe the low energy electronic degrees of freedom in these systems. We apply the model to study the case of (vdW) systems formed by a graphene sheet and a topological insulator. We discuss the electronic transport properties of such systems and show how they exhibit much stronger spin-dependent transport effects than isolated topological insulators. We then consider vdW systems in which the layer with strong spin-orbit coupling is a monolayer transition metal dichalcogenide (TMD) and briefly discuss graphene-TMD systems. In the second part of the article we discuss the case in which the vdW system includes a superconducting layer in addition to the layer with strong spin-orbit coupling. We show in detail how these systems can be designed to realize odd-frequency superconducting pair correlations. Finally, we discuss twisted graphene-NbSe2 bilayer systems as an example in which the strength of the proximity-induced superconducting pairing in the normal layer, and its Ising character, can be tuned via the relative twist angle between the two layers forming the heterostructure.
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