No Arabic abstract
Magnetic insulators such as yttrium iron garnet, Y3Fe5O12, with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and efficient spin current generation and transmission. We demonstrate reliable and efficient epitaxial growth and nanopatterning of Y3Fe5O12 thin-film based nanostructures on insulating Gd3Ga5O12 substrates. In particular, our fabrication process is compatible with conventional sputtering and liftoff, and does not require aggressive ion milling which may be detrimental to the oxide thin films. Structural and magnetic properties indicate good qualities, in particular low magnetic damping of both films and patterned structures. The dynamic magnetic properties of the nanostructures are systematically investigated as a function of the lateral dimension. By comparing to ferromagnetic nanowire structures, a distinct edge mode in addition to the main mode is identified by both experiments and simulations, which also exhbits cross-over with the main mode upon varying the width of the wires. The non-linear evolution of dynamic modes over nanostructural dimensions highlights the important role of size confinement to their material properties in magnetic devices where Y3Fe5O12 nanostructures serve as the key functional component.
A magnetic material combining low losses and large Perpendicular Magnetic Anisotropy (PMA) is still a missing brick in the magnonic and spintronic fields. We report here on the growth of ultrathin Bismuth doped Y$_{3}$Fe$_{5}$O$_{12}$ (BiYIG) films on Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) and substituted GGG (sGGG) (111) oriented substrates. A fine tuning of the PMA is obtained using both epitaxial strain and growth induced anisotropies. Both spontaneously in-plane and out-of-plane magnetized thin films can be elaborated. Ferromagnetic Resonance (FMR) measurements demonstrate the high dynamic quality of these BiYIG ultrathin films, PMA films with Gilbert damping values as low as 3 10$^{-4}$ and FMR linewidth of 0.3 mT at 8 GHz are achieved even for films that do not exceed 30 nm in thickness. Moreover, we measure Inverse Spin Hall Effect (ISHE) on Pt/BiYIG stacks showing that the magnetic insulator$$s surface is transparent to spin current making it appealing for spintronic applications.
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet transition in (In,Mn)As and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such degree of control even in metallic materials. Here, we show reversible modulation of up to two orders of magnitude of the inverse spin Hall effect - a phenomenon that governs interconversion between spin and charge currents - in ultrathin platinum. Spin-to-charge conversion enables the generation and use of electric and spin currents in the same device, which is crucial for the future of spintronics and electronics.
Spin current injection from sputtered yttrium iron garnet (YIG) films into an adjacent platinum layer has been investigated by means of the spin pumping and the spin Seebeck effects. Films with a thickness of 83 and 96 nanometers were fabricated by on-axis magnetron rf sputtering at room temperature and subsequent post-annealing. From the frequency dependence of the ferromagnetic resonance linewidth, the damping constant has been estimated to be $(7.0pm1.0)times 10^{-4}$. Magnitudes of the spin current generated by the spin pumping and the spin Seebeck effect are of the same order as values for YIG films prepared by liquid phase epitaxy. The efficient spin current injection can be ascribed to a good YIG|Pt interface, which is confirmed by the large spin-mixing conductance $(2.0pm0.2)times 10^{18}$ m$^{-2}$.
We report grazing incidence small angle neutron scattering (GISANS) and complementary off-specular neutron reflectometry (OSR) of the magnetic order in a single-crystalline epitaxial MnSi film on Si(111) in the thick film limit. Providing a means of direct reciprocal space mapping, GISANS and OSR reveal a magnetic modulation perpendicular to the films under magnetic fields parallel and perpendicular to the film, where additional polarized neutron reflectometry (PNR) and magnetization measurements are in excellent agreement with the literature. Regardless of field orientation, our data does not suggest the presence of more complex spin textures, notably the formation of skyrmions. This observation establishes a distinct difference with bulk samples of MnSi of similar thickness under perpendicular field, in which a skyrmion lattice dominates the phase diagram. Extended x-ray absorption fine structure measurements suggest that small shifts of the Si positions within the unstrained unit cell control the magnetic state, representing the main difference between the films and thin bulk samples.
We have fabricated ferrite cantilevers in which their vibrational properties can be controlled by external magnetic fields. Submicron-scale cantilever structures were made from Y3Fe5O12 (YIG) films by physical etching combined with use of a focused ion beam milling technique. We found that the cantilevers exhibit two resonance modes which correspond to horizontal and vertical vibrations. Under external magnetic fields, the resonance frequency of the horizontal mode increases, while that of the vertical mode decreases, quantitatively consistent with our numerical simulation for magnetic forces. The changes in resonance frequencies with magnetic fields reach a few percent, showing that efficient magnetic control of resonance frequencies was achieved.