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Register a new userAndreev reflection at the edge of a two-dimentional semimetal
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We investigate electron transport through the interface between a niobium superconductor and the edge of a two-dimensional semimetal, realized in a 20~nm wide HgTe quantum well. Experimentally, we observe that typical behavior of a single Andreev contact is complicated by both a pronounced zero-bias resistance anomaly and shallow subgap resistance oscillations with $1/n$ periodicity. These results are demonstrated to be independent of the superconducting material and should be regarded as specific to a 2D semimetal in a proximity with a superconductor. We interpret these effects to originate from the Andreev-like correlated process at the edge of a two-dimensional semimetal.
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We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro- (at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.
We show experimentally that in nanometer scaled superconductor/normal metal hybrid devices and in a small window of contact resistances, crossed Andreev reflection (CAR) can dominate the nonlocal transport for all energies below the superconducting gap. Besides CAR, elastic cotunneling (EC) and nonlocal charge imbalance (CI) can be identified as competing subgap transport mechanisms in temperature dependent four-terminal nonlocal measurements. We demonstrate a systematic change of the nonlocal resistance vs. bias characteristics with increasing contact resistances, which can be varied in the fabrication process. For samples with higher contact resistances, CAR is weakened relative to EC in the midgap regime, possibly due to dynamical Coulomb blockade. Gaining control of CAR is an important step towards the realization of a solid state entangler.
Andreev reflection at the interface between a half-metallic ferromagnet and a spin-singlet superconductor is possible only if it is accompanied by a spin flip. Here we calculate the Andreev reflection amplitudes for the case that the spin flip originates from a spatially non-uniform magnetization direction in the half metal. We calculate both the microscopic Andreev reflection amplitude for a single reflection event and an effective Andreev reflection amplitude describing the effect of multiple Andreev reflections in a ballistic thin film geometry. It is shown that the angle and energy dependence of the Andreev reflection amplitude strongly depends on the orientation of the gradient of the magnetization with respect to the interface. Establishing a connection between the scattering approach employed here and earlier work that employs the quasiclassical formalism, we connect the symmetry properties of the Andreev reflection amplitudes to the symmetry properties of the anomalous Green function in the half metal.
Andreev reflection in graphene is special since it can be of two types- retro or specular. Specular Andreev reflection (SAR) dominates when the position of the Fermi energy in graphene is comparable to or smaller than the superconducting gap. Bilayer graphene (BLG) is an ideal candidate to observe the crossover from retro to specular since the Fermi energy broadening near the Dirac point is much weaker compared to monolayer graphene. Recently, the observation of signatures of SAR in BLG have been reported experimentally by looking at the enhancement of conductance at finite bias near the Dirac point. However, the signatures were not very pronounced possibly due to the participation of normal quasi-particles at bias energies close to the superconducting gap. Here, we propose a scheme to observe the features of enhanced SAR even at zero bias at a normal metal (NM)-superconductor (SC) junction on BLG. Our scheme involves applying a Zeeman field to the NM side of the NM-SC junction on BLG (making the NM ferromagnetic), which energetically separates the Dirac points for up-spin and down-spin. We calculate the conductance as a function of chemical potential and bias within the superconducting gap and show that well-defined regions of specular- and retro-type Andreev reflection exist. We compare the results with and without superconductivity. We also investigate the possibility of the formation of a p-n junction at the interface between the NM and SC due to a work function mismatch.
We find that the triplet Andreev reflection amplitude at the interface between a half-metal and an s-wave superconductor in the presence of a domain wall is significantly enhanced if the half metal is a thin film, rather than an extended magnet. The enhancement is by a factor $l_{rm d}/d$, where $l_{rm d}$ is the width of the domain wall and $d$ the film thickness. We conclude that in a lateral geometry, domain walls can be an effective source of the triplet proximity effect.
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