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Register a new userHints on the origin of the thermal hysteresis suppression in giant magnetocaloric thin films irradiatied with highly charged ions
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Added by
Martino Trassinelli
Publication date
2015
fields
Physics
and research's language is
English
Authors
S Cervera
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In a recent experiment we demonstrated the possibility to suppress the thermal hysteresis of the phase transition in giant magnetocaloric MnAs thin film by interaction with slow highly charged ions (Ne 9+ at 90 keV) [1]. This phenomenon has a major impact for possible applications in magnetic refrigeration and thus its reproducibility and robustness are of prime importance. Here we present some new investigations about the origin and the nature of the irradiation-induced defects responsible for the thermal hysteresis suppression. Considering in particular two samples that receive different ion fluences (two order of magnitude of difference), we investigate the reliability of this process. The stability of the irradiation-induced defects with respect to a soft annealing is studied by X-ray diffraction and magnetometry measurements, which provide some new insights on the mechanisms involved.
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We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150 nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6times10^{12}$ to $1.6times10^{15}$ ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Preliminary results are presented. From the study of the lattice spacing, we measure a change on the film structure that depends on the received dose, similarly to previous studies with other materials. Investigations on the surface show a strong modification of its magnetic properties.
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Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm.
We have studied the origin of a counter intuitive diffusion behavior of Fe and N atoms in a iron mononitride (FeN) thin film. It was observed that in-spite of a larger atomic size, Fe tend to diffuse more rapidly than smaller N atoms. This only happens in the N-rich region of Fe-N phase diagram, in the N-poor regions, N diffusion coefficient is orders of magnitude larger than Fe. Detailed self-diffusion measurements performed in FeN thin films reveal that the diffusion mechanism of Fe and N is different - Fe atoms diffuse through a complex process, which in addition to a volume diffusion, pre-dominantly controlled by a fast grain boundary diffusion. On the other hand N atoms diffuse through a classical volume-type diffusion process. Observed results have been explained in terms of stronger Fe-N (than Fe-Fe) bonds generally predicted theoretically for mononitride compositions of transition metals.
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