Do you want to publish a course? Click here

Transport anisotropy in Ge quantum wells in the absence of quantum oscillations

204   0   0.0 ( 0 )
 Added by Michael A. Zudov
 Publication date 2015
  fields Physics
and research's language is English




Ask ChatGPT about the research

Recent study of a high-mobility 2D hole gas in a strained Ge quantum well revealed strong transport anisotropy in the quantum Hall regime when the magnetic field was tilted away from the sample normal. In the present study we demonstrate that the anisotropy persists to such high temperatures and filling factors that quantum oscillations are no longer observed. This finding rules out the formation of a stripe phase as a possible origin for the observed anisotropy. However, we also show that the observed anisotropy is not consistent with other known anisotropies, such as those arising from finite thickness effects or surface roughness.



rate research

Read More

369 - Q. Shi , M. A. Zudov , C. Morrison 2015
We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed $3times 10^4$. The anisotropy occurs in a wide range of filling factors where it is determined {em primarily} by the tilt angle. The lack of significant anisotropy without an in-plane field, easy tunability, and persistence to higher temperatures and filling factors set this anisotropy apart from nematic phases in GaAs/AlGaAs.
We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for epitaxial microstructures of n-type PbSe and PbTe, in which pronounced nonlocal effects and reproducible magnetoresistance oscillations were found. Here we show that these effects are brought about by a quasi-periodic network of threading dislocations adjacent to the BaF$_2$ substrate, which give rise to a p-type interfacial layer and an associated parasitic parallel conductance. We then present results of transport measurements on microstructures of modulation doped PbTe/(Pb,Eu)Te:Bi heterostructures for which the influence of parasitic parallel conductance is minimized, and for which quantum Hall transport had been observed, on similar samples, previously. These structures are of H-shaped geometry and they are patterned of 12 nm thick strained PbTe quantum wells embedded between Pb$_{0.92}$Eu$_{0.08}$Te barriers. The structures have different lateral sizes corresponding to both diffusive and ballistic electron transport in non-equivalent L valleys. For these structures no nonlocal resistance is detected confirming that PbTe is a trivial insulator. The magnitude of spin Hall angle gamma is estimated to be smaller than 0.02 for PbTe/PbEuTe microstructures in the diffusive regime.
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal damping of the amplitude of Shubnikov-de Haas oscillations, we measure a light mass of $0.061m_e$ at a density of $2.2times10^{11}$ cm$^{-2}$. We confirm the theoretically predicted dependence of increasing mass with density and by extrapolation we find an effective mass of $sim0.05m_e$ at zero density, the lightest effective mass for a planar platform that demonstrated spin qubits in quantum dots.
The effective g-factor of 2D holes in modulation doped mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9 times 10^{11}$~to $6.2 times 10^{11}~text{cm}^{-2}$ was measured in perpendicular magnetic fields up to $8~text{T}$ using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the $mathrm{g}_{perp}$-factor of each sample was determined. The $mathrm{g}_{perp}$-factor was found to be decreasing approximately linearly with hole density. This effect is attributed to non-parabolicity of the valence band.
We report on the experimental evidence for a nanosecond time-scale spin memory based on nonradiative excitons. The effect manifests itself in magnetic-field-induced oscillations of the energy of the optically active (radiative) excitons. The oscillations detected by a spectrally-resolved pump-probe technique applied to a GaAs/AlGaAs quantum well structure in a transverse magnetic field persist over a time scale, which is orders of magnitude longer than the characteristic decoherence time in the system. The effect is attributed to the spin-dependent electron-electron exchange interaction of the optically active and inactive excitons. The spin relaxation time of the electrons belonging to nonradiative excitons appears to be much longer than the hole spin relaxation time.
comments
Fetching comments Fetching comments
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا