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Register a new userAbsence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces
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Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxial films display a magnetoresistance upon rotating the magnetization of the magnetic layer. We report here X-ray magnetic circular dichroism (XMCD) recorded at Pt-L2,3 and Pt-M3 edges. The results indicate that the Pt magnetic moment, if any, is below the detection limit (< 0.001 {mu}$_B$/Pt), thus strongly favoring the view that the presence of CoFe2O4 does not induce the formation of magnetic moments in Pt. Therefore, the observed magnetoresistance cannot be attributed to some sort of proximity-induced magnetic moments at Pt ions and subsequent magnetic-field dependent scattering. It thus follows that either bulk (spin Hall and Inverse spin Hall Effects) or interface (Rashba) spin-orbit related effects dominate the observed magnetoresistance. Furthermore, comparison of bulk magnetization and XMCD data at (Fe,Co)-L2,3 edges suggests the presence of some spin disorder in the CoFe2O4 layer which may be relevant for the observed anomalous non-saturating field-dependence of spin Hall magnetoresistance.
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We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt via AMR is further supported by density functional theory calculations and various control measurements including insertion of a Cu spacer layer to suppress the induced ferromagnetism. In addition, anomalous Hall effect measurements show an out-of-plane magnetic hysteresis loop of the induced ferromagnetic phase with larger coercivity and larger remanence than the bulk CoFe2O4. By demonstrating MPE in Pt/CoFe2O4, these results establish the spinel ferrite family as a promising material for MPE and spin manipulation via proximity exchange fields.
We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena such as spin pumping or spin Seebeck effect, is found to be different depending on the crystallographic orientation of CFO, highlighting the role of the composition and density of magnetic ions at the interface on spin mixing.
We experimentally demonstrate the existence of magnetic coupling between two ferromagnets separated by a thin Pt layer. The coupling remains ferromagnetic regardless of the Pt thickness, and exhibits a significant dependence on temperature. Therefore, it cannot be explained by the established mechanisms of magnetic coupling across nonmagnetic spacers. We show that the experimental results are consistent with the presence of magnetism induced in Pt in proximity to ferromagnets, in direct analogy to the well-known proximity effects in superconductivity.
The magnetic proximity effect in top and bottom Pt layers induced by Co in Ta/Pt/Co/Pt multilayers has been studied by interface sensitive, element specific x-ray resonant magnetic reflectivity. The asymmetry ratio for circularly polarized x-rays of left and right helicity has been measured at the Pt $L_3$ absorption edge (11567 eV) with an in-plane magnetic field ($pm158$ mT) to verify its magnetic origin. The proximity-induced magnetic moment in the bottom Pt layer decreases with the thickness of the Ta buffer layer. Grazing incidence x-ray diffraction has been carried out to show that the Ta buffer layer induces the growth of Pt(011) rather than Pt(111) which in turn reduces the induced moment. A detailed density functional theory study shows that an adjacent Co layer induces more magnetic moment in Pt(111) than in Pt(011). The manipulation of the magnetism in Pt by the insertion of a Ta buffer layer provides a new way of controlling the magnetic proximity effect which is of huge importance in spin-transport experiments across similar kind of interfaces.
We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). The obtained exchange-splitting varies from tens to hundreds of meV. We also find an electron doping induced by YIG and europium chalcogenides substrates, that shift the Fermi level up to 0.78 eV and 1.3 eV respectively, whereas hole doping up to 0.5 eV is generated by CFO. Furthermore, we study the variation of the extracted exchange and tight binding parameters as a function of the EuO and EuS thicknesses. We show that those parameters are robust to thickness variation such that a single monolayer of magnetic insulator can induce a large magnetic proximity effect on graphene. Those findings pave the way towards possible engineering of graphene spin-gating by proximity effect especially in view of recent experiments advancement.
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