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Register a new userPhysical Architecture for a Universal Topological Quantum Computer based on a Network of Majorana Nanowires
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The idea of topological quantum computation (TQC) is to store and manipulate quantum information in an intrinsically fault-tolerant manner by utilizing the physics of topologically ordered phases of matter. Currently, one of the most promising platforms for a topological qubit is in terms of Majorana fermion zero modes (MZMs) in spin-orbit coupled superconducting nanowires. However, the topologically robust operations that are possible with MZMs can be efficiently simulated on a classical computer and are therefore not sufficient for realizing a universal gate set for TQC. Here, we show that an array of coupled semiconductor-superconductor nanowires with MZM edge states can be used to realize a more sophisticated type of non-Abelian defect: a genon in an Ising $times$ Ising topological state. This leads to a possible implementation of the missing topologically protected $pi/8$ phase gate and thus universal TQC based on semiconductor-superconductor nanowire technology. We provide detailed numerical estimates of the relevant energy scales, which we show to lie within accessible ranges.
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Recent experiments have produced mounting evidence of Majorana zero modes in nanowire-superconductor hybrids. Signatures of an expected topological phase transition accompanying the onset of these modes nevertheless remain elusive. We investigate a fundamental question concerning this issue: Do well-formed Majorana modes necessarily entail a sharp phase transition in these setups? Assuming reasonable parameters, we argue that finite-size effects can dramatically smooth this putative transition into a crossover, even in systems large enough to support well-localized Majorana modes. We propose overcoming such finite-size effects by examining the behavior of low-lying excited states through tunneling spectroscopy. In particular, the excited-state energies exhibit characteristic field and density dependence, and scaling with system size, that expose an approaching topological phase transition. We suggest several experiments for extracting the predicted behavior. As a useful byproduct, the protocols also allow one to measure the wires spin-orbit coupling directly in its superconducting environment.
We consider a three-dimensional topological insulator (TI) wire with a non-uniform chemical potential induced by gating across the cross-section. This inhomogeneity in chemical potential lifts the degeneracy between two one-dimensional surface state subbands. A magnetic field applied along the wire, due to orbital effects, breaks time-reversal symmetry and lifts the Kramers degeneracy at zero-momentum. If placed in proximity to an $s$-wave superconductor, the system can be brought into a topological phase at relatively weak magnetic fields. Majorana bound states (MBSs), localized at the ends of the TI wire, emerge and are present for an exceptionally large region of parameter space in realistic systems. Unlike in previous proposals, these MBSs occur without the requirement of a vortex in the superconducting pairing potential, which represents a significant simplification for experiments. Our results open a pathway to the realisation of MBSs in present day TI wire devices.
Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.
Recent advances in quantum error correction (QEC) codes for fault-tolerant quantum computing cite{Terhal2015} and physical realizations of high-fidelity qubits in a broad range of platforms cite{Kok2007, Brown2011, Barends2014, Waldherr2014, Dolde2014, Muhonen2014, Veldhorst2014} give promise for the construction of a quantum computer based on millions of interacting qubits. However, the classical-quantum interface remains a nascent field of exploration. Here, we propose an architecture for a silicon-based quantum computer processor based entirely on complementary metal-oxide-semiconductor (CMOS) technology, which is the basis for all modern processor chips. We show how a transistor-based control circuit together with charge-storage electrodes can be used to operate a dense and scalable two-dimensional qubit system. The qubits are defined by the spin states of a single electron confined in a quantum dot, coupled via exchange interactions, controlled using a microwave cavity, and measured via gate-based dispersive readout cite{Colless2013}. This system, based entirely on available technology and existing components, is compatible with general surface code quantum error correction cite{Terhal2015}, enabling large-scale universal quantum computation.
We study a double-nanowire setup proximity coupled to an $s$-wave superconductor and search for the bulk signatures of the topological phase transition that can be observed experimentally, for example, with an STM tip. Three bulk quantities, namely, the charge, the spin polarization, and the pairing amplitude of intrawire superconductivity are studied in this work. The spin polarization and the pairing amplitude flip sign as the system undergoes a phase transition from the trivial to the topological phase. In order to identify promising ways to observe bulk signatures of the phase transition in transport experiments, we compute the spin current flowing between a local spin-polarized probe, such as an STM tip, and the double-nanowire system in the Keldysh formalism. We find that the spin current contains information about the sign flip of the bulk spin polarization and can be used to determine the topological phase transition point.
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