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Optimization of vortex pinning by nanoparticles using simulations of time-dependent Ginzburg-Landau model

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 Added by Ivan Sadovskyy
 Publication date 2015
  fields Physics
and research's language is English




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Introducing nanoparticles into superconducting materials has emerged as an efficient route to enhance their current-carrying capability. We address the problem of optimizing vortex pinning landscape for randomly distributed metallic spherical inclusions using large-scale numerical simulations of time-dependent Ginzburg-Landau equations. We found the size and density of particles for which the highest critical current is realized in a fixed magnetic field. For each particle size and magnetic field, the critical current reaches a maximum value at a certain particle density, which typically corresponds to 15-23% of the total volume being replaced by nonsuperconducting material. For fixed diameter, this optimal particle density increases with the magnetic field. Moreover, we found that the optimal particle diameter slowly decreases with the magnetic field from 4.5 to 2.5 coherence lengths at a given temperature. This result shows that pinning landscapes have to be designed for specific applications taking into account relevant magnetic field scales.

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We study the Hall effect in square, planar type-II superconductors using numerical simulations of time dependent Ginzburg-Landau (TDGL) equations. The Hall field in some type-II superconductors displays sign-change behavior at some magnetic fields due to the induced field of vortex flow, when its contribution is strong enough to reverse the field direction. In this work, we use modified TDGL equations which couple an externally applied current, and also incorporate normal-state and flux-flow Hall effects. We obtain the profile of Hall angle as a function of applied magnetic field for four different sizes (ltimes l) of the superconductor: l/ xi belongs to {3, 5, 15, 20}. We obtain vastly different profiles for each size, proving that size is an important parameter that determines Hall behavior. We find that electric field dynamics provides an insight into several anomalous features including signchange of Hall angle, and leads us to the precise transient behavior of order parameter responsible for them.
We consider a Ginzburg-Landau type energy with a piecewise constant pinning term $a$ in the potential $(a^2 - |u|^2)^2$. The function $a$ is different from 1 only on finitely many disjoint domains, called the {it pinning domains}. These pinning domains model small impurities in a homogeneous superconductor and shrink to single points in the limit $vto0$; here, $v$ is the inverse of the Ginzburg-Landau parameter. We study the energy minimization in a smooth simply connected domain $Omega subset mathbb{C}$ with Dirichlet boundary condition $g$ on $d O$, with topological degree ${rm deg}_{d O} (g) = d >0$. Our main result is that, for small $v$, minimizers have $d$ distinct zeros (vortices) which are inside the pinning domains and they have a degree equal to 1. The question of finding the locations of the pinning domains with vortices is reduced to a discrete minimization problem for a finite-dimensional functional of renormalized energy. We also find the position of the vortices inside the pinning domains and show that, asymptotically, this position is determined by {it local renormalized energy} which does not depend on the external boundary conditions.
We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc.
108 - N. Pompeo , V. Galluzzi , R. Rogai 2007
We probe the short-range pinning properties with the application of microwave currents at very high driving frequencies (47.7 GHz) on YBa$_2$Cu$_3$O$_{7-delta}$ films with and without sub-micrometer BaZrO$_3$ inclusions. We explore the temperature and field ranges 60 K$<T<T_c$ and 0$<mu_0H<$0.8 T, with the field applied along the c-axis. The magnetic field induces a much smaller increase of the microwave resistivity, $Delta rho_1(H)+mathrm{i}Delta rho_2(H)$, in YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$ with respect to pure YBa$_2$Cu$_3$O$_{7-delta}$. $Delta rho_1(H)$ is slightly superlinear in pure YBa$_2$Cu$_3$O$_{7-delta}$ (suggesting a possible contribution of thermal activation), but linear or sublinear in YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$ (suggesting a possible suppression of thermal activation as a consequence of BaZrO$_3$ inclusions). These features persist up to close to $T_c$. We discuss our data in terms of the ratio $r=Delta X_s(H)/Delta R_s(H)$ in the framework of the models for the microwave surface impedance in the mixed state. Large $r$ are found in YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$, with little field dependence. By contrast, smaller values and stronger field dependences are found in pure YBa$_2$Cu$_3$O$_{7-delta}$. We discuss the different field dependence of the pinning constant.
110 - I. Kusevic , E. Babic , O. Husnjak 2003
The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB$_{2}$ tapes have been measured at temperatures $Tgeq 28$ K in magnetic fields $Bleq 0.9$ T. The irreversibility line $B_{irr}(T)$ for doped tape shows a stepwise variation with a kink around 0.3 T. Such $B_{irr}(T)$ variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field $% B_{phi}$) and is very different from a smooth $B_{irr}(T)$ variation in undoped MgB$_{2}$ samples. The microstructure studies of nanoparticle doped MgB$_{2}$ samples show uniformly dispersed nanoprecipitates, which probably act as a correlated disorder. The observed difference between the field variations of the critical current density and pinning force density of the doped and undoped tape supports the above findings.
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