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Register a new userRole of hexagonal boron nitride in protecting ferromagnetic nanostructures from oxidation
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Ferromagnetic contacts are widely used to inject spin polarized currents into non-magnetic materials such as semiconductors or 2-dimensional materials like graphene. In these systems, oxidation of the ferromagnetic materials poses an intrinsic limitation on device performance. Here we investigate the role of ex-situ transferred chemical vapour deposited hexagonal boron nitride (hBN) as an oxidation barrier for nanostructured cobalt and permalloy electrodes. The chemical state of the ferromagnets was investigated using X-ray photoemission electron microscopy owing to its high sensitivity and lateral resolution. We have compared the oxide thickness formed on ferromagnetic nanostructures covered by hBN to uncovered reference structures. Our results show that hBN reduces the oxidation rate of ferromagnetic nanostructures suggesting that it could be used as an ultra-thin protection layer in future spintronic devices.
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Growing interest in devices based on layered van der Waals (vdW) materials is motivating the development of new nanofabrication methods. Hexagonal boron nitride (hBN) is one of the most promising materials for studies of quantum photonics and polaritonics. Here, we report in detail on a promising nanofabrication processes used to fabricate several hBN photonic devices using a hybrid electron beam induced etching (EBIE) and reactive ion etching (RIE) technique. We highlight the shortcomings and benefits of RIE and EBIE and demonstrate the utility of the hybrid approach for the fabrication of suspended and supported device structures with nanoscale features and highly vertical sidewalls. Functionality of the fabricated devices is proven by measurements of high quality cavity optical modes (Q~1500). Our nanofabrication approach constitutes an advance towards an integrated, monolithic quantum photonics platform based on hBN and other layered vdW materials.
The inherent crystal anisotropy of hexagonal boron nitride (hBN) sustains naturally hyperbolic phonon polaritons, i.e. polaritons that can propagate with very large wavevectors within the material volume, thereby enabling optical confinement to exceedingly small dimensions. Indeed, previous research has shown that nanometer-scale truncated nanocone hBN cavities, with deep subwavelength dimensions, support three-dimensionally confined optical modes in the mid-infrared. Due to optical selection rules, only a few of many such modes predicted theoretically have been observed experimentally via far-field reflection and scattering-type scanning near-field optical microscopy. The Photothermal induced resonance (PTIR) technique probes optical and vibrational resonances overcoming weak far-field emission by leveraging an atomic force microscope (AFM) probe to transduce local sample expansion due to light absorption. Here we show that PTIR enables the direct observation of previously unobserved, dark hyperbolic modes of hBN nanostructures. Leveraging these optical modes could yield a new degree of control over the electromagnetic near-field concentration, polarization and angular momentum in nanophotonic applications.
Hexagonal boron nitride (h-BN), one of the hallmark van der Waals (vdW) layered crystals with an ensemble of attractive physical properties, is playing increasingly important roles in exploring two-dimensional (2D) electronics, photonics, mechanics, and emerging quantum engineering. Here, we report on the demonstration of h-BN phononic crystal waveguides with designed pass and stop bands in the radio frequency (RF) range and controllable wave propagation and transmission, by harnessing arrays of coupled h-BN nanomechanical resonators with engineerable coupling strength. Experimental measurements validate that these phononic crystal waveguides confine and support 15 to 24 megahertz (MHz) wave propagation over 1.2 millimeters. Analogous to solid-state atomic crystal lattices, phononic bandgaps and dispersive behaviors have been observed and systematically investigated in the h-BN phononic waveguides. Guiding and manipulating acoustic waves on such additively integratable h-BN platform may facilitate multiphysical coupling and information transduction, and open up new opportunities for coherent on-chip signal processing and communication via emerging h-BN photonic and phononic devices.
We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5 um long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pin-hole free nature of the thin-hBN as an efficient tunnel barrier.
We reported the basal-plane thermal conductivity in exfoliated bilayer hexagonal boron nitride h-BN that was measured using suspended prepatterned microstructures. The h-BN sample suitable for thermal measurements was fabricated by dry-transfer method, whose sample quality, due to less polymer residues on surfaces, is believed to be superior to that of PMMA-mediated samples. The measured room temperature thermal conductivity is around 484 Wm-1K-1(+141 Wm-1K-1/ -24 Wm-1K-1) which exceeds that in bulk h-BN, providing experimental observation of the thickness-dependent thermal conductivity in suspended few-layer h-BN.
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