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Register a new userAll electrical manipulation of magnetization dynamics in a ferromagnet by antiferromagnets with anisotropic spin Hall effects
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We investigate spin-orbit torques of metallic CuAu-I-type antiferromagnets using spin-torque ferromagnetic resonance tuned by a dc-bias current. The observed spin torques predominantly arise from diffusive transport of spin current generated by the spin Hall effect. We find a growth-orientation dependence of the spin torques by studying epitaxial samples, which may be correlated to the anisotropy of the spin Hall effect. The observed anisotropy is consistent with first-principles calculations on the intrinsic spin Hall effect. Our work demonstrates large tunable spin-orbit effects in magnetically-ordered materials.
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We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac-current in a NiFe/IrMn bilayer. At room temperature, we observe antidamping-like spin torque acting on the NiFe ferromagnet, generated by the in-plane current driven through the IrMn antiferromagnet. A large enhancement of the torque, characterized by an effective spin-Hall angle exceeding most heavy transition metals, correlates with the presence of the exchange-bias field at the NiFe/IrMn interface. It highlights that, in addition to strong spin-orbit coupling, the antiferromagnetic order in IrMn governs the observed phenomenon.
The understanding of spin dynamics in laterally confined structures on sub-micron length scales has become a significant aspect of the development of novel magnetic storage technologies. Numerous ferromagnetic resonance measurements, optical characterization by Kerr microscopy and Brillouin light scattering spectroscopy and x-ray studies were carried out to detect the dynamics in patterned magnetic antidot lattices. Here, we investigate Oersted-field driven spin dynamics in rectangular Ni80Fe20/Pt antidot lattices with different lattice parameters by electrical means and compare them to micromagnetic simulations. When the system is driven to resonance, a dc voltage across the length of the sample is detected that changes its sign upon field reversal, which is in agreement with a rectification mechanism based on the inverse spin Hall effect. Furthermore, we show that the voltage output scales linearly with the applied microwave drive in the investigated range of powers. Our findings have direct implications on the development of engineered magnonics applications and devices.
Microwave assisted magnetization reversal has been investigated in a bilayer system of Pt/ferromagnet by detecting a change in the polarity of the spin pumping signal. The reversal process is studied in two material systems, Pt/CoFeB and Pt/NiFe, for different aspect ratios. The onset of the switching behavior is indicated by a sharp transition in the spin pumping voltage. At a threshold value of the external field, the switching process changes from partial to full reversal with increasing microwave power. The proposed method provides a simple way to detect microwave assisted magnetization reversal.
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.
We have studied the magnetization reversal process in FM/AFM bilayer structures through of spin dynamics simulation. It has been observed that the magnetization behavior is different at each branch of the hysteresis loop as well as the exchange-bias behavior. On the descending branch a sudden change of the magnetization is observed while on the ascending branch is observed a bland change of the magnetization. The occurrence of the asymmetry in the hysteresis loop and the variation in the exchange-bias is due to anisotropy which is introduced only in the coupling between ferromagnetic (FM) and antiferromagnetic (AFM) layers.
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