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Register a new userElectronic, magnetic and transport properties of Fe intercalated 2H-TaS$_2$ studied by means of the KKR-CPA method
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The electronic, magnetic and transport properties of Fe intercalated 2H-TaS$_2$ have been investigated by means of the Korringa-Kohn-Rostoker (KKR) method. The non-stoichiometry and disorder in the system has been accounted for using the Coherent Potential Approximation (CPA) alloy theory. A pronounced influence of disorder on the spin magnetic moment has been found for the ferro-magnetically ordered material. The same applies for the spin-orbit induced orbital magnetic moment and magneto-crystalline anisotropy energy. The temperature-dependence of the resistivity of disordered 2H-Fe$_{0.28}$TaS$_2$ investigated on the basis of the Kubo-Stv{r}eda formalism in combination with the alloy analogy model has been found in very satisfying agreement with experimental data. This also holds for the temperature dependent anomalous Hall resistivity $ rho_{rm xy}(T) $. The role of thermally induced lattice vibrations and spin fluctuations for the transport properties is discussed in detail.
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Magnetic properties of a $sigma-$Fe$_{16}$Cr$_{14}$ alloy calculated with the charge and spin self- consistent Korringa-Kohn-Rostoker (KKR) and combined with coherent potential approximation (KKR-CPA) methods are reported. Non-magnetic state as well as various magnetic orderings were considered, i.e. ferromagnetic (FM) and more complex anti-parallel (called APM) arrangements for selected sublattices, as follows from the symmetry analysis. It has been shown that the Stoner criterion applied to non-magnetic density of states at the Fermi energy, $E_F$ is satisfied for Fe atoms situated on all five lattice sites, while it is not fulfilled for all Cr atoms. In FM and APM states, the values of magnetic moments on Fe atoms occupying various sites are dispersed between 0 and 2.5 $mu_B$, and they are proportional to the number of Fe atoms in the nearest-neighbor shell. Magnetic moments of Cr atoms havin much smaller values were found to be coupled antiparallel to those of Fe atoms. The average value of the magnetic moment per atom was found to be $<mu>=0.55 mu_B$ that is by a factor of 4 larger than the experimental value found for a $sigma-$Fe$_{0.538}$Cr$_{0.462}$ sample. Conversely, admitting an anti- parallel ordering (APM model) on atoms situated on C and D sites, according to the group theory and symmetry analysis results, yielded a substantial reduction of $<mu>$ to 0.20 $mu_B$. Further diminution of $<mu>$ to 0.15 $mu_B$, which is very close to the experimental value of 0.14 $mu_B$, has been achieved with the KKR-CPA calculations by considering a chemical disorder on sites B, C and D.
The method of electronic structure calculations for strongly correlated disordered materials is developed employing the basic idea of coherent potential approximation (CPA). Evolution of electronic structure and spin magnetic moment value with concentration $x$ in strongly correlated Ni$_{1-x}$Zn$_x$O solid solutions is investigated in the frame of this method. The obtained values of energy gap and magnetic moment are in agreement with the available experimental data.
Here we use low-temperature scanning tunneling microscopy and spectroscopy to reveal the roles of the narrow electronic band in two 1$T$-TaS$_2$ related materials (bulk 1$T$-TaS$_2$ and 4$H_{rm b}$-TaS$_2$). 4$H_{rm b}$-TaS$_2$ is a superconducting compound with alternating 1$T$-TaS$_2$ and 1$H$-TaS$_2$ layers, where the 1$H$-TaS$_2$ layer has weak charge density wave (CDW) pattern and reduces the CDW coupling between the adjacent 1$T$-TaS$_2$ layers. In the 1$T$-TaS$_2$ layer of 4$H_{rm b}$-TaS$_2$, we observe a narrow electronic band located near Fermi level, and its spatial distribution is consistent with the tight-binding calculations for two-dimensional 1$T$-TaS$_2$ layers. The weak electronic hybridization between the 1$T$-TaS$_2$ and 1$H$-TaS$_2$ layers in 4$H_{rm b}$-TaS$_2$ shifts the narrow electronic band to be slightly above the Fermi level, which suppresses the electronic correlation induced band splitting. In contrast, in bulk 1$T$-TaS$_2$, there is an interlayer CDW coupling induced insulating gap. In comparison with the spatial distributions of the electronic states in bulk 1$T$-TaS$_2$ and 4$H_{rm b}$-TaS$_2$, the insulating gap in bulk 1$T$-TaS$_2$ results from the formation of a bonding band and an antibonding band due to the overlap of the narrow electronic bands in the dimerized 1$T$-TaS$_2$ layers.
Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new material system is even more apparent when considering that graphene is the thinnest member of a larger family: the few-layer graphene materials. Even though several physical properties are shared between graphene and its few-layers, recent theoretical and experimental advances demonstrate that each specific thickness of few-layer graphene is a material with unique physical properties.
We report a systematic first-principles study on the recent discovered superconducting Ba$_{1-x}$K$_x$Fe$_2$As$_2$ systems ($x$ = 0.00, 0.25, 0.50, 0.75, and 1.00). Previous theoretical studies strongly overestimated the magnetic moment on Fe of the parent compound BaFe$_2$As$_2$. Using a negative on-site energy $U$, we obtain a magnetic moment 0.83 $mu_B$ per Fe, which agrees well with the experimental value (0.87 $mu_B$). K doping tends to increase the density of states at fermi level. The magnetic instability is enhanced with light doping, and is then weaken by increasing the doping level. The energetics for the different K doping sites are also discussed.
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