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Register a new userLight localisation and magneto-optic enhancement in Ni anti-dot arrays
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Added by
Evangelos Papaioannou
Publication date
2015
fields
Physics
and research's language is
English
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The excitation of surface plasmons in magnetic nano-structures can strongly influence their magneto-optical properties. Here, we use photoemission electron microscopy to map the spatial distribution of the electric near-field on a nano-patterned magnetic surface that supports plasmon polaritons. By using different photon energies and polarization states of the incident light we reveal that the electric near-field is either concentrated in spots forming a hexagonal lattice with the same symmetry as the Ni nano-pattern or in stripes oriented along the $Gamma$-K direction of the lattice and perpendicular to the polarization direction. We show that the polarization-dependent near-field enhancement on the patterned surface is directly correlated to both the excitation of surface plasmon polaritons on the patterned surface as well as the enhancement of the polar magneto-optical Kerr effect.
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The influence of surface plasmons on the magneto-optic activity in a two-dimensional hexagonal array is addressed. The experiments were performed using hexagonal array of circular holes in a ferromagnetic Ni film. Well pronounced troughs are observed in the optical reflectivity, resulting from the presence of surface plasmons. The surface plasmons are found to strongly enhance the magneto-optic response (Kerr rotation), as compared to a continuous film of the same composition. The influence of the hexagonal symmetry of the pattern on the coupling between the plasmonic excitations is demonstrated, using optical diffraction measurements and theoretical calculations of the magneto-optic and of the angular dependence of the optical activity.
In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging due to the inefficiency of emission due to silicons indirect band-gap, and to the difficulty in separating spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges to measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300% near room temperature in a seven Tesla magnetic field showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.
Large surface plasmon polariton assisted enhancement of the magneto-optical activity has been observed in the past, through spectral measurements of the polar Kerr rotation in Co hexagonal antidot arrays. Here, we report a strong thickness dependence, which is unexpected given that the Kerr effect is considered a surface sensitive phenomena. The maximum Kerr rotation was found to be -0.66 degrees for a 100 nm thick sample. This thickness is far above the typical optical penetration depth of a continuous Co film, demonstrating that in the presence of plasmons the critical lengthscales are dramatically altered, and in this case extended. We therefore establish that the plasmon enhanced Kerr effect does not only depend on the in-plane structuring of the sample, but also on the out-of-plane geometrical parameters, which is an important consideration in magnetoplasmonic device design.
We present studies on magnetic nano-structures with 3D architectures, fabricated using electrodeposition in the pores of well-ordered templates prepared by self-assembly of polystyrene latex spheres. The coercive field is found to demonstrate an oscillatory dependence on film thickness reflecting the patterning transverse to the film plane. Our results demonstrate that 3D patterned magnetic materials are prototypes of a new class of geometrical multilayer structures in which the layering is due to local shape effects rather then compositional differences.
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing.
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