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Register a new userEffective 90-degree magnetization rotation in Co2FeAl thin film/Piezoelectric system probed by microstripline ferromagnetic
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Microstripline ferromagnetic resonance technique has been used to study the indirect magnetoelectric coupling occurring in an artificial magnetoelectric heterostructure consisting of a magnetostrictive thin film cemented onto a piezoelectric actuator. Two different modes (sweep-field and sweep-frequency modes) of this technique have been employed to quantitatively probe the indirect magnetoelectric coupling and to observe a voltage induced magnetization rotation (of 90 degree). This latter has been validated by the experimental frequency variation of the uniform mode and by the amplitude of the sweep-frequency spectra.
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Bending effect on the magnetic anisotropy in 20 nm Co$_{2}$FeAl Heusler thin film grown on Kaptontextregistered{} has been studied by ferromagnetic resonance and glued on curved sample carrier with various radii. The results reported in this letter show that the magnetic anisotropy is drastically changed in this system by bending the thin films. This effect is attributed to the interfacial strain transmission from the substrate to the film and to the magnetoelastic behavior of the Co$_{2}$FeAl film. Moreover two approaches to determine the in-plane magnetostriction coefficient of the film, leading to a value that is close to $lambda^{CFA}=14times10^{-6}$, have been proposed.
The magnetization characteristic in a permalloy thin strip is investigated by electrically measuring the anisotropic magnetoresistance and ferromagnetic resonance in in-plane and out-of-plane configurations. Our results indicate that the magnetization vector can rotate in the film plane as well as out of the film plane by changing the intensity of external magnetic field of certain direction. The magnetization characteristic can be explained by considering demagnetization and magnetic anisotropy. Our method can be used to obtain the demagnetization factor, saturated magnetic moment and the magnetic anisotropy.
We have shown that polarized neutron reflectometry can determine in a model-free way not only the mean magnetization of a ferromagnetic thin film at any point of a hysteresis cycle, but also the mean square dispersion of the magnetization vectors of its lateral domains. This technique is applied to elucidate the mechanism of the magnetization reversal of an exchange-biased Co/CoO bilayer. The reversal process above the blocking temperature is governed by uniaxial domain switching, while below the blocking temperature the reversal of magnetization for the trained sample takes place with substantial domain rotation.
Solving the stochastic Landau-Lifshitz-Gilbert equation numerically, we investigate the effect of the potential landscape on the attempt frequency of magnetization in nanomagnets with the thin-film geometry. Numerical estimates of the attempt frequency are analyzed in comparison with theoretical predictions from the Fokker-Planck equation for the Neel-Brown model. It is found that for a nanomagnet with the thin-film geometry, theoretically predicted values for the universal case are in excellent agreement with numerical estimates.
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for spintronics, as a natural spin filter or pure spin source, and as qubits for topological quantum computing. For ranges typically used in experiments, we investigate the effect of doping, substrate choice and film thickness on the (Bi, Sb)$_2$Te$_3$ unit cell using high-resolution X-ray diffractometry. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy measurements provide local structural and interfacial information. We find that the unit cell is unaffected in-plane by vanadium doping changes, and remains unchanged over a thickness range of 4--10 quintuple layers (1 QL $approx$ 1 nm). The in-plane lattice parameter ($a$) also remains the same in films grown on different substrate materials. However, out-of-plane the $c$-axis is reduced in films grown on less closely lattice-matched substrates, and increases with the doping level.
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