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Register a new userFerromagnetic Domain Distribution in Thin Films During Magnetization Reversal
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W.-T. Lee
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We have shown that polarized neutron reflectometry can determine in a model-free way not only the mean magnetization of a ferromagnetic thin film at any point of a hysteresis cycle, but also the mean square dispersion of the magnetization vectors of its lateral domains. This technique is applied to elucidate the mechanism of the magnetization reversal of an exchange-biased Co/CoO bilayer. The reversal process above the blocking temperature is governed by uniaxial domain switching, while below the blocking temperature the reversal of magnetization for the trained sample takes place with substantial domain rotation.
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Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al2O3(0001) substrate using PLD technique. The angle dependent magnetic hysteresis, remanent coercivity and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.
Among the magnetostrictive alloys the one formed of iron and gallium (called Galfenol from its U.S. Office of Naval Research discoverers in the late 90s) is attractive for its low hysteresis, good tensile stress, good machinability and its rare-earth free composition. One of its applications is its association with a piezoelectric material to form a extrinsic multiferroic composite as an alternative to the rare room temperature intrinsic multiferroics such as BiFeO$_3$. This study focuses on thin Fe$_{0.81}$Ga$_{0.19}$ films of thickness 5, 10, 20 and 60 nm deposited by sputtering onto glass substrates. Magnetization reversal study reveals a well-defined symmetry with two principal directions independent of the thickness. The magnetic signature of this magnetic anisotropy decreases with increasing FeGa thickness due to an increase of the non-preferential polycrystalline arrangement, as revealed by transmission electron microscopy (TEM) observations. Thus when magnetic field is applied along these specific directions, magnetization reversal is mainly coherent for the thinnest sample as seen from the transverse magnetization cycles. Magnetostriction coefficient reaches 20 ppm for the 5 nm film and decreases for thicker samples, where polycrystalline part with non-preferential orientation prevails.
Using the angular dependence of the planar Hall effect in GaMnAs ferromagnetic films, we were able to determine the distribution of magnetic domain pinning fields in this material. Interestingly, there is a major difference between the pinning field distribution in as-grown and in annealed films, the former showing a strikingly narrower distribution than the latter. This conspicuous difference can be attributed to the degree of non-uniformity of magnetic anisotropy in both types of films. This finding provides a better understanding of the magnetic domain landscape in GaMnAs that has been the subject of intense debate.
Domain wall displacement in Co/Pt thin films induced by not only fs- but also ps-laser pulses is demonstrated using time-resolved magneto-optical Faraday imaging. We evidence multi-pulse helicity-dependent laser-induced domain wall motion in all-optical switchable Co/Pt multilayers with a laser energy below the switching threshold. Domain wall displacement of about 2 nm per 2- ps pulse is achieved. By investigating separately the effect of linear and circular polarization, we reveal that laser-induced domain wall motion results from a complex interplay between pinning, temperature gradient and helicity effect. Then, we explore the microscopic origin of the helicity effect acting on the domain wall. These experimental results enhance the understanding of the mechanism of all-optical switching in ultra-thin ferromagnetic films.
The ideal intrinsic barriers to domain switching in c-phase PbTiO_3 (PTO), PbZrO_3 (PZO), and PbZr_{1-x}Ti_xO_3 (PZT) are investigated via first-principles computational methods. The effects of epitaxial strain on the atomic structure, ferroelectric response, barrier to coherent domain reversal, domain-wall energy, and barrier to domain-wall translation are studied. It is found that PTO has a larger polarization, but smaller energy barrier to domain reversal, than PZO. Consequentially the idealized coercive field is over two times smaller in PTO than PZO. The Ti--O bond length is more sensitive to strain than the other bonds in the crystals. This results in the polarization and domain-wall energy in PTO having greater sensitivity to strain than in PZO. Two ordered phases of PZT are considered, the rock-salt structure and a (100) PTO/PZO superlattice. In these simple structures we find that the ferroelectric properties do not obey Vergards law, but instead can be approximated as an average over individual 5-atom unit cells.
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