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Register a new userElectrical control of near-field energy transfer between quantum dots and 2D semiconductors
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We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Forster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 lead to large (~500%) changes in the FRET rate. This, in turn, allows for up to ~75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.
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Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes.
The radiative heat transfer between gold nanoparticle layers is presented using the coupled dipole method. Gold nanoparticles are modelled as effective electric and magnetic dipoles interacting via electromagnetic fluctuations. The effect of higher-order multipoles is implemented in the expression of electric polarizability to calculate the interactions at short distances. Our findings show that the near-field radiation reduces as the radius of the nanoparticles is increased. Also, the magnetic dipole contribution to the heat exchange becomes more important for larger particles. When one layer is displayed in parallel with respect to the other layer, the near-field heat transfer exhibits oscillatory-like features due to the influence of the individual nanostructures. Further details about the effect of the nanoparticles size are also discussed.
The dynamic heat transfer between two half-spaces separated by a vacuum gap due to coupling of their surface modes is modelled using the theory that describes the dynamic energy transfer between two coupled harmonic oscillators each separately connected to a heat bath and with the heat baths maintained at different temperatures. The theory is applied for the case when the two surfaces are made up of a polar crystal which supports surface polaritons that can be excited at room temperature and the predicted heat transfer is compared with the steady state heat transfer value calculated from standard fluctuational electrodynamics theory. It is observed that for small time intervals the value of heat flux can reach as high as 1.5 times that of steady state value.
Extreme near-field heat transfer between metallic surfaces is a subject of debate as the state-of-the-art theory and experiments are in disagreement on the energy carriers driving heat transport. In an effort to elucidate the physics of extreme near-field heat transfer between metallic surfaces, this Letter presents a comprehensive model combining radiation, acoustic phonon and electron transport across sub-10-nm vacuum gaps. The results obtained for gold surfaces show that in the absence of bias voltage, acoustic phonon transport is dominant for vacuum gaps smaller than ~2 nm. The application of a bias voltage significantly affects the dominant energy carriers as it increases the phonon contribution mediated by the long-range Coulomb force and the electron contribution due to a lower potential barrier. For a bias voltage of 0.6 V, acoustic phonon transport becomes dominant at a vacuum gap of 5 nm, whereas electron tunneling dominates at sub-1-nm vacuum gaps. The comparison of the theory against experimental data from the literature suggests that well-controlled measurements between metallic surfaces are needed to quantify the contributions of acoustic phonon and electron as a function of the bias voltage.
Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between neighbouring dots has been demonstrated[3, 4] with great control, and the manipulation of electrons in single and double-dot systems is advancing rapidly.[5-8] For distances greater than a few hundred nanometres neither free propagation nor tunnelling are viable whilst maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second unoccupied dot along a long empty channel. The transfer direction may be reversed and the same electron moved back and forth over sixty times without error, a cumulative distance of 0.25 mm. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information-processing components and devices.
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