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Register a new userSuperconducting/magnetic three state nanodevice for memory and reading applications
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We present a simple nanodevice that can operate in two modes: i) three-state memory and ii) reading device. The nanodevice is fabricated with an array of ordered triangular-shaped nanomagnets embedded in a superconducting thin film. The input signal is ac current and the output signal is dc voltage. Vortex ratchet effect in combination with out of plane magnetic anisotropy of the nanomagnets is the background physics which governs the nanodevice performance.
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In this work we study theoretically the properties of S-F/N-sIS type Josephson junctions in the frame of the quasiclassical Usadel formalism. The structure consists of two superconducting electrodes (S), a tunnel barrier (I), a combined normal metal/ferromagnet (N/F) interlayer and a thin superconducting film (s). We demonstrate the breakdown of a spatial uniformity of the superconducting order in the s-film and its decomposition into domains with a phase shift $pi $ . The effect is sensitive to the thickness of the s layer and the widths of the F and N films in the direction along the sIS interface. We predict the existence of a regime where the structure has two energy minima and can be switched between them by an electric current injected laterally into the structure. The state of the system can be non-destructively read by an electric current flowing across the junction.
Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{rm c}$) and magnetic fields (B$_{rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvin temperatures is yet to be evaluated. Here, we report the presence of a reentrant resistive transition below T$_{rm c}$ for Si:Ga whose strength strongly depends on the distribution of the Ga clusters that precipitate in the implanted Si after annealing. By monitoring the reentrant resistance over a wide parameter space of implantation energies and fluences, we determine conditions that significantly improve the coherent coupling of Ga clusters, therefore, eliminating the reentrant transition even at temperatures as low as 20~mK.
We describe the read-out process of the state of a Josephson flux qubit via solitons in Josephson transmission lines (JTL) as they are in use in the standard rapid single flux quantum (RSFQ) technology. We consider the situation where the information about the state of the qubit is stored in the time delay of the soliton. We analyze dissipative underdamped JTLs, take into account their jitter, and provide estimates of the measuring time and efficiency of the measurement for relevant experimental parameters.
Within the Ginzburg-Landau model we study the critical field and temperature enhancement for crossing superconducting channels formed either along the sample edges or domain walls in thin-film magnetically coupled superconducting - ferromagnetic bilayers. The corresponding Cooper pair wave function can be viewed as a hybridization of two order parameter (OP) modes propagating along the boundaries and/or domain walls. Different momenta of hybridized OP modes result in the formation of vortex chains outgoing from the crossing point of these channels. Near this crossing point the wave functions of the modes merge giving rise to the increase in the critical temperature for a localized superconducting state. The origin of this critical temperature enhancement caused by the wave function squeezing is illustrated for a limiting case of approaching parallel boundaries and/or domain walls. Using both the variational method and numerical simulations we have studied the critical temperature dependence and OP structure vs the applied magnetic field and the angle between the crossing channels.
We investigate Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SISFS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SISFS junctions fall into two distinct classes based on the thickness of S layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SISFS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SISFS structure with thin superconducting S-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibit IcRn product only ~30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SISFS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits.
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