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Register a new userAtomic vapor spectroscopy in integrated photonic structures
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We investigate an integrated optical chip immersed in atomic vapor providing several waveguide geometries for spectroscopy applications. The narrow-band transmission through a silicon nitride waveguide and interferometer is altered when the guided light is coupled to a vapor of rubidium atoms via the evanescent tail of the waveguide mode. We use grating couplers to couple between the waveguide mode and the radiating wave, which allow for addressing arbitrary coupling positions on the chip surface. The evanescent atom-light interaction can be numerically simulated and shows excellent agreement with our experimental data. This work demonstrates a next step towards miniaturization and integration of alkali atom spectroscopy and provides a platform for further fundamental studies of complex waveguide structures.
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Strongly interacting atom-cavity systems within a network with many nodes constitute a possible realization for a quantum internet which allows for quantum communication and computation on the same platform. To implement such large-scale quantum networks, nanophotonic resonators are promising candidates because they can be scalably fabricated and interconnected with waveguides and optical fibers. By integrating arrays of ring resonators into a vapor cell we show that thermal rubidium atoms above room temperature can be coupled to photonic cavities as building blocks for chip-scale hybrid circuits. Although strong coupling is not yet achieved in this first realization, our approach provides a key step towards miniaturization and scalability of atom-cavity systems.
We report the experimental observation of Coherent Population Oscillation (CPO) based light storage in an atomic vapor cell at room temperature. Using the ultranarrow CPO between the ground levels of a $Lambda$ system selected by polarization in metastable $^4$He, such a light storage is experimentally shown to be phase preserving. As it does not involve any atomic coherences it has the advantage of being robust to dephasing effects such as small magnetic field inhomogeneities. The storage time is limited by the population lifetime of the ground states of the $Lambda$ system.
We describe the operation of two GaN-based diode lasers for the laser spectroscopy of gallium at 403 nm and 417 nm. Their use in an external cavity configuration enabled the investigation of absorption spectroscopy in a gallium hollow cathode. We have analyzed the Doppler broadened profiles accounting for hyperfine and isotope structure and extracting both the temperature and densities of the neutral atomic sample produced in the glow discharge. We have also built a setup to produce a thermal atomic beam of gallium. Using the GaN-based diode lasers we have studied the laser induced fluorescence and hyperfine resolved spectra of gallium.
Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo-optic or electro-optic modulation effects, resulting in a large footprint and high energy consumption. As a promising alternative, chalcogenide phase-change materials (PCMs) exhibit strong modulation in a static, self-holding fashion. Here, we demonstrate nonvolatile electrically reconfigurable photonic switches using PCM-clad silicon waveguides and microring resonators that are intrinsically compact and energy-efficient. With phase transitions actuated by in-situ silicon PIN heaters, near-zero additional loss and reversible switching with high endurance are obtained in a complementary metal-oxide-semiconductor (CMOS)-compatible process. Our work can potentially enable very large-scale general-purpose programmable integrated photonic processors.
We analyze atomic photoexcitation into the discrete states by twisted photons, or photons carrying extra orbital angular momentum along their direction of propagation. From the angular momentum and parity considerations, we are able to relate twisted-photon photoexcitation amplitudes to their plane-wave analogues, independently of the details of the atomic wave functions. We analyzed the photo-absorption cross sections of mixed-multipolarity $E2-M1$ transitions in ionized atoms and found fundamental differences coming from the photon topology. Our theoretical analysis demonstrates that it is possible to extract the relative transition rates of different multipolar contributions by measuring the photo-excitation rate as a function of the atoms position (or the impact parameter) with respect to the optical vortex center. The proposed technique for separation of multipoles can be implemented if the targets atom position is resolved with sub-wavelength accuracy, for example, with Paul traps. Numerical examples are presented for Boron-like highly-charged ions (HCI).
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