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Register a new userSurface-termination dependent magnetism and strong perpendicular magnetocrystalline anisotropy of a FeRh (001) thin film: A density-functional study
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Magnetism of FeRh (001) films strongly depends on film thickness and surface terminations. While magnetic ground state of bulk FeRh is G-type antiferromagnetism, the Rh-terminated films exhibit ferromagnetism with strong perpendicular MCA whose energy +2.1 meV/$Box$ is two orders of magnitude greater than 3$d$ magnetic metals, where $Box$ is area of two-dimensional unit cell. While Goodenough-Kanamori-Anderson rule on the superexchange interaction is crucial in determining the magnetic ground phases of FeRh bulk and thin films, the magnetic phases are results of interplay and competition between three mechanisms - the superexchange interaction, the Zener direct-interaction, and magnetic energy gain.
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The origin of large perpendicular magneto-crystalline anisotropy (PMCA) in Fe/MgO (001) is revealed by comparing Fe layers with and without the MgO. Although Fe-O $p$-$d$ hybridization is weakly present, it cannot be the main origin of the large PMCA as claimed in previous study. Instead, perfect epitaxy of Fe on the MgO is more important to achieve such large PMCA. As an evidence, we show that the surface layer in a clean free-standing Fe (001) dominantly contributes to $E_{MCA}$, while in the Fe/MgO, those by the surface and the interface Fe layers contribute almost equally. The presence of MgO does not change positive contribution from $langle xz|ell_Z|yzrangle$, whereas it reduces negative contribution from $langle z^2|ell_X|yzrangle$ and $langle xy|ell_X|xz,yzrangle$.
Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co$_2$MnAl and Fe$_2$MnAl with one to three unit cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron energy loss spectroscopy maps confirmed clearly segregated epitaxial Heusler layers with high cobalt or high iron concentrations for samples grown near room temperature on GaAs (001). Superlattice structures grown with an excess of aluminum had significantly lower thin film shape anisotropy and resulted in an out-of-plane spin reorientation transition at temperatures below 200 K for samples grown on GaAs (001). Synchrotron-based spin resolved photoemission spectroscopy found that the superlattice structure improves the Fermi level spin polarization near the X point in the bulk Brillouin zone. Stoichiometric Co$_2$MnAl terminated superlattice grown on MgO (001) had a spin polarization of 95%, while a pure Co$_2$MnAl film had a spin polarization of only 65%.
With a view to the design of hard magnets without rare earths we explore the possibility of large magnetocrystalline anisotropy energies in Heusler compounds that are unstable with respect to a tetragonal distortion. We consider the Heusler compounds Fe$_2$YZ with Y = (Ni, Co, Pt), and Co$_2$YZ with Y = (Ni, Fe, Pt) where, in both cases, Z = (Al, Ga, Ge, In, Sn). We find that for the Co$_2$NiZ, Co$_2$PtZ, and Fe$_2$PtZ families the cubic phase is always, at $T=0$, unstable with respect to a tetragonal distortion, while, in contrast, for the Fe$_2$NiZ and Fe$_2$CoZ families this is the case for only 2 compounds -- Fe$_2$CoGe and Fe$_2$CoSn. For all compounds in which a tetragonal distortion occurs we calculate the MAE finding remarkably large values for the Pt containing Heuslers, but also large values for a number of the other compounds (e.g. Co$_2$NiGa has an MAE of -2.11~MJ/m$^3$). The tendency to a tetragonal distortion we find to be strongly correlated with a high density of states at the Fermi level in the cubic phase. As a corollary to this fact we observe that upon doping compounds for which the cubic structure is stable such that the Fermi level enters a region of high DOS, a tetragonal distortion is induced and a correspondingly large value of the MAE is then observed.
In the framework of real-time time-dependent density functional theory (RT-TDDFT) we unravel the layer-resolved dynamics of the electronic structure of a (Fe)$_1$/(MgO)$_3$(001) multilayer system after an optical excitation with a frequency below the band gap of bulk MgO. Substantial transient changes to the electronic structure, which persist after the duration of the pulse, are mainly observed for in-plane polarized electric fields, corresponding to a laser pulse arriving perpendicular to the interface. While the strongest charge redistribution takes place in the Fe layer, a time-dependent change in the occupation numbers is visible in all layers, mediated by the presence of interface states. The time evolution of the layer-resolved time-dependent occupation numbers indicates a strong orbital dependence with the depletion from in-plane orbitals (e. g., $d_{x^2-y^2}$ of Fe) and accumulation in out-of-plane orbitals ($d_{3z^2-r^2}$ of Fe and $p_z$ of apical oxygen). We also observe a small net charge transfer away from oxygen towards the Mg sites even for MgO layers which are not directly in contact with the metallic Fe.
The surface charge associated with the spontaneous polarization in ferroelectrics is well known to cause a depolarizing field that can be particularly detrimental in the thin-film geometry desirable for microelectronic devices. Incomplete screening of the surface charge, for example by metallic electrodes or surface adsorbates, can lead to the formation of domains, suppression or reorientation of the polarization, or even stabilization of a higher energy non-polar phase . A huge amount of research and development effort has been invested in understanding the depolarizing behavior and minimizing its unfavorable effects. Here we demonstrate the opposite behavior: A strong polarizing field that drives thin films of materials that are centrosymmetric and paraelectric in their bulk form into a non-centrosymmetric, polar state. We illustrate the behavior using density functional computations for perovskite-structure potassium tantalate, KTaO$_3$, which is of considerable interest for its high dielectric constant, proximity to a quantum critical point and superconductivity. We then provide a simple recipe to identify whether a particular material and film orientation will exhibit the effect, and develop an electrostatic model to estimate the critical thickness of the induced polarization in terms of well-known material parameters. Our results provide practical guidelines for exploiting the electrostatic properties of thin-film ionic insulators to engineer novel functionalities for nanoscale devices.
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