No Arabic abstract
Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphenes unique electronic spectrum and the possibility to tune junction properties by gate voltage. Here we describe graphene junctions with a mean free path of several micrometres, low contact resistance and large supercurrents. Such devices exhibit pronounced Fabry-Perot oscillations not only in the normal-state resistance but also in the critical current. The proximity effect is mostly suppressed in magnetic fields below 10mT, showing the conventional Fraunhofer pattern. Unexpectedly, some proximity survives even in fields higher than 1 T. Superconducting states randomly appear and disappear as a function of field and carrier concentration, and each of them exhibits a supercurrent carrying capacity close to the universal quantum limit. We attribute the high-field Josephson effect to mesoscopic Andreev states that persist near graphene edges. Our work reveals new proximity regimes that can be controlled by quantum confinement and cyclotron motion.
Short ballistic graphene Josephson junctions sustain superconducting current with a non-sinusoidal current-phase relation up to a critical current threshold. The current-phase relation, arising from proximitized superconductivity, is gate-voltage tunable and exhibits peculiar skewness observed in high quality graphene superconductors heterostructures with clean interfaces. These properties make graphene Josephson junctions promising sensitive quantum probes of microscopic fluctuations underlying transport in two-dimensions. We show that the power spectrum of the critical current fluctuations has a characteristic $1/f$ dependence on frequency, $f$, probing two points and higher correlations of carrier density fluctuations of the graphene channel induced by carrier traps in the nearby substrate. Tunability with the Fermi level, close to and far from the charge neutrality point, and temperature dependence of the noise amplitude are clear fingerprints of the underlying material-inherent processes. Our results suggest a roadmap for the analysis of decoherence sources in the implementation of coherent devices by hybrid nanostructures.
Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52$ textrm{mV}/Phi_0$) and flux-to-current (above 12$ textrm{nA}/Phi_0$) transfer functions, with the best estimated flux sensitivity $sim$2.6$ muPhi_0/sqrt{textrm{Hz}}$ reached under fixed voltage bias, where $Phi_0$ is the flux quantum. The interferometers operate up to $T_textrm{bath}simeq$ 2 $ textrm{K}$, with an improvement of 70$%$ of the maximal operating temperature with respect to early SQUIPTs design. The main features of the V-based SQUIPT are described within a simplified theoretical model. Our results open the way to the realization of SQUIPTs that take advantage of the use of higher-gap superconductors for ultra-sensitive nanoscale applications that operate at temperatures well above 1 K.
Superconductors are known to be excellent thermal insulators at low temperature owing to the presence of the energy gap in their density of states (DOS). In this context, the superconducting textit{proximity effect} allows to tune the local DOS of a metallic wire by controlling the phase bias ($varphi$) imposed across it. As a result, the wire thermal conductance can be tuned over several orders of magnitude by phase manipulation. Despite strong implications in nanoscale heat management, experimental proofs of phase-driven control of thermal transport in superconducting proximitized nanostructures are still very limited. Here, we report the experimental demonstration of efficient heat current control by phase tuning the superconducting proximity effect. This is achieved by exploiting the magnetic flux-driven manipulation of the DOS of a quasi one-dimensional aluminum nanowire forming a weal-link embedded in a superconducting ring. Our thermal superconducting quantum interference transistor (T-SQUIPT) shows temperature modulations up to $sim 16$ mK yielding a temperature-to-flux transfer function as large as $sim 60$ mK/$Phi_0$. Yet, phase-slip transitions occurring in the nanowire Josephson junction induce a hysteretic dependence of its local DOS on the direction of the applied magnetic field. Thus, we also prove the operation of the T-SQUIPT as a phase-tunable textit{thermal memory}, where the information is encoded in the temperature of the metallic mesoscopic island. Besides their relevance in quantum physics, our results are pivotal for the design of innovative coherent caloritronics devices such as heat valves and temperature amplifiers suitable for thermal logic architectures.
The proximity effect (PE) between superconductor and confined electrons can induce the effective pairing phenomena of electrons in nanowire or quantum dot (QD). Through interpreting the PE as an exchange of virtually quasi-excitation in a largely gapped superconductor, we found that there exists another induced dynamic process. Unlike the effective pairing that mixes the QD electron states coherently, this extra process leads to dephasing of the QD. In a case study, the dephasing time is inversely proportional to the Coulomb interaction strength between two electrons in the QD. Further theoretical investigations imply that this dephasing effect can decrease the quality of the zero temperature mesoscopic electron transportation measurements by lowering and broadening the corresponding differential conductance peaks.
We propose a way of making graphene superconductive by putting on it small superconductive islands which cover a tiny fraction of graphene area. We show that the critical temperature, T_c, can reach several Kelvins at the experimentally accessible range of parameters. At low temperatures, T<<T_c, and zero magnetic field, the density of states is characterized by a small gap E_g<T_c resulting from the collective proximity effect. Transverse magnetic field H_g(T) E_g is expected to destroy the spectral gap driving graphene layer to a kind of a superconductive glass state. Melting of the glass state into a metal occurs at a higher field H_{g2}(T).