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Register a new userSpin Textures of Polariton Condensates in a Tunable Microcavity with Strong Spin-Orbit Interaction
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Scott Dufferwiel Mr
Publication date
2015
fields
Physics
and research's language is
English
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We report an extended family of spin textures in coexisting modes of zero-dimensional polariton condensates spatially confined in tunable open microcavity structures. The coupling between photon spin and angular momentum, which is enhanced in the open cavity structures, leads to new eigenstates of the polariton condensates carrying quantised spin vortices. Depending on the strength and anisotropy of the cavity confinement potential and the strength of the spin-orbit coupling, which can be tuned via the excitonic/photonic fractions, the condensate emissions exhibit either spin-vortex-like patterns or linear polarization, in good agreement with theoretical modelling.
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A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices.
We study theoretically the ground states of topological defects in a spinor four-component condensate of cold indirect excitons. We analyze possible ground state solutions for different configurations of vortices and half-vortices. We show that if only Rashba or Dreselhaus spin-orbit interaction (SOI) for electrons is present the stable states of topological defects can represent a cylindrically symmetric half-vortex or half vortex-antivortex pairs, or a non-trivial pattern with warped vortices. In the presence of both of Rashba and Dresselhaus SOI the ground state of a condensate represents a stripe phase and vortex type solutions become unstable.
Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric doping technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weak-antilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications.
In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.
We show that the spin-orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for the bound states formation. The mechanism can be realized in 2D materials with sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.
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