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To investigate the origin of the enhanced Tc ({approx} 110 K) of the trilayer cuprate superconductor Bi2Sr2Ca2Cu3O10+{delta} (Bi-2223), its underdoped single crystals are a critical requirement. Here, we demonstrate the first successful in-plane resistivity measurements of heavily underdoped Bi-2223 (zero-resistivity temperatures {approx} 20~35 K). Detailed crystal growth methods, the annealing process, as well as X-ray diffraction (XRD) and magnetic susceptibility measurement results are also reported.
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We have studied electrical transport properties of a high quality Bi2Sr2Ca2Cu3O10+x crystal below a superconducting critical temperature, Tc. In magnetic fields B parallel to the c-axis just above a voltage response onset resistance vs temperature data are well fitted to the vortex-glass model. Obtained from the vortex-glass analysis a melting transition boundary for Bi-2223 crystal shifted towards lower temperatures compared to previously reported data for a (Bi,Pb)-2223 single crystal. The critical current density, Jc, of Bi-2223 crystals is close to presented elsewhere Jc values for Bi-2223 tapes suggesting a principal role of weak intrinsic pinning properties of Bi-2223 as a main limiting factor of Jc of Bi-2223 conductors.
We report the pressure effect in Bi2Sr2Ca2Cu3O10+{delta} (Bi-2223) single crystal with a small amount of intergrowth of Bi2Sr2CaCu2O8+{delta} (Bi-2212). Their superconducting transition temperatures Tcs showed a domelike shape as a function of pressure, which showed a good agreement with the general relation between the carrier concentration and Tc. Our experimental results indicate that high pressure can induce effective carrier doping into the multilayered high-Tc cuprate superconductor
Single crystal of Cu0.03TaS2 with low copper intercalated content was successfully grown via chemical iodine-vapor transport. The structural characterization results show that the copper intercalated 2H-Cu0.03TaS2 single crystal has the same structure of the CdI2-type structure as the parent 2H-TaS2 crystal. Electrical resistivity and magnetization measurements reveal that 2H-Cu0.03TaS2 becomes a superconductor below 4.2 K. Besides, electrical resistivity and Hall effects results show that a charge density wave transition occurs at TCDW = 50 K.
Superconductivity was discovered in a Ni0:05TaS2 single crystal. A Ni0:05TaS2 single crystal was successfully grown via the NaCl/KCl flux method. The obtained lattice constant c of Ni0:05TaS2 is 1.1999 nm, which is significantly smaller than that of 2H-TaS2 (1.208 nm). Electrical resistivity and magnetization measurements reveal that the superconductivity transition temperature of Ni0:05TaS2 is enhanced from 0.8 K (2H-TaS2) to 3.9 K. The charge-density-wave transition of the matrix compound 2H-TaS2 is suppressed in Ni0:05TaS2. The success of Ni0:05TaS2 single crystal growth via a NaCl/KCl flux demonstrates that NaCl/KCl flux method will be a feasible method for single crystal growth of the layered transition metal dichalcogenides.
In this letter, we report growth and characterization of bulk Bi2Se3 single crystals. The studied Bi2Se3 crystals are grown by self flux method through solid state reaction from high temperature (950C) melt of constituent elements and slow cooling (2C/hour). The resultant crystals are shiny and grown in [00l] direction, as evidenced from surface XRD. Detailed Reitveld analysis of PXRD (powder x-ray diffraction) of the crystals showed that these are crystallized in rhombohedral crystal structure with space group of R3m (D5) and the lattice parameters are a = 4.14(2)A, b = 4.14 (2) A and c = 28.7010(7) A. Temperature versus resistivity (R-T) plots revealed metallic conduction down to 2K, with typical room temperature resistivity (R300K) of around 0.53 mohm-cm and residual resistivity of 0.12 mohm-cm. Resistivity under magnetic field ] measurements exhibited large +Ve magneto resistance right from 2K to 200K. Isothermal magneto resistance [RH] measurements at 2K, 100K and 200K exhibited magneto resistance (MR) of up to 240, 130 and 60 percent respectively at 14 Tesla. Further the MR plots are non saturating and linear with field at all temperature. At 2K the MR plots showed clear quantum oscillations at above say 10 Tesla applied field. Also the Kohler plots i.e., were seen consolidating on one plot. Interestingly, the studied Bi2Se3 single crystal exhibited the Shubnikov-de Haas oscillations (SdH) at 2K under different applied magnetic fields ranging from 4Tesla to 14 Tesla
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