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Register a new userBulk photovoltaic effect enhancement via electrostatic control in layered ferroelectrics
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The correlation between the shift current mechanism for the bulk photovoltaic effect (BPVE) and the structural and electronic properties of ferroelectric perovskite oxides is not well understood. Here, we study and engineer the shift current photovoltaic effect using a visible-light-absorbing ferroelectric Pb(Ni$_{x}$Ti$_{1-x}$)O$_{3-x}$ solid solution from first principles. We show that the covalent orbital character dicates the direction, magnitude, and onset energy of shift current in a predictable fashion. In particular, we find that the shift current response can be enhanced via electrostatic control in layered ferroelectrics, as bound charges face a stronger impetus to screen the electric field in a thicker material, delocalizing electron densities. This heterogeneous layered structure with alternative photocurrent generating and insulating layers is ideal for BPVE applications.
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We calculate the bulk photovoltaic response of the ferroelectrics BaTiO$_3$ and PbTiO$_3$ from first principles by applying shift current theory to the electronic structure from density functional theory. The first principles results for BaTiO$_3$ reproduce eperimental photocurrent direction and magnitude as a function of light frequency, as well as the dependence of current on light polarization, demonstrating that shift current is the dominant mechanism of the bulk photovoltaic effect in BaTiO$_3$. Additionally, we analyze the relationship between response and material properties in detail. The photocurrent does not depend simply or strongly on the magnitude of material polarization, as has been previously assumed; instead, electronic states with delocalized, covalent bonding that is highly asymmetric along the current direction are required for strong shift current enhancements. The complexity of the response dependence on both external and material parameters suggests applications not only in solar energy conversion, but to photocatalysis and sensor and switch type devices as well.
Statistical distribution of switching times is a key information necessary to describe the dynamic response of a polycrystalline bulk ferroelectric to an applied electric field. The Inhomogeneous Field Mechanism (IFM) model offers a useful tool which allows extraction of this information from polarization switching measurements over a large time window. In this paper, the model was further developed to account for the presence of non-switchable regions in fatigued materials. Application of the IFM- analysis to bipolar electric cycling induced fatigue process of various lead-based and lead-free ferroelectric ceramics reveals different scenarios of property degradation. Insight is gained into different underlying fatigue mechanisms inherent to the investigated systems.
Structurally chiral materials hosting multifold fermions with large topological number have attracted considerable attention because of their naturally long surface Fermi arcs and bulk quantized circular photogalvanic effect (CPGE). Multifold fermions only appear in metallic states, and therefore, most studies so far have only focused on the semimetals in compounds with chiral crystal structures. In this work, we show that the structurally chiral topological trivial insulators are also exotic states, which is interesting from the application point of view, owing to their natural advantage to host a large bulk photovoltaic effect in the visible wavelength region. In the last decades, the shift current in the visible wavelength region was limited to be 10 uA/V2 . By scanning the insulators with chiral structure, we found a class of compounds with photoconductivity ranging from 20 to 80 uA/V2 , which is approximately one order of magnitude larger than that reported in other real materials. This work illustrates that the compounds with chiral structure can host both quantum CPGE and a strong shift current in the second order optical response. Moreover, this work offers a good platform for the study of the shift current and its future application by putting the focus on insulator with chiral lattices, so far overlooked in photovoltaic technologies.
Spin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BPSV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BPSV and the role of the electronic relaxation time $tau$ are also elucidated. We apply our theory to several distinct material systems, including transition metal dichalcogenides, anti-ferromagnetic $rm MnBi_2Te_4$, and the surface of topological crystalline insulator cubic $rm SnTe$.
Wake-up effect is still an obstacle in the commercialization of hafnia-based ferroelectric thin films. In this work, we investigate the effect of defects, controlled by ozone dosage, on the field cycling behavior of the atomic layer deposited Hf0.5Zr0.5O2 (HZO) films. A nearly wake-up free device was achieved after reduction of carbon contamination and oxygen defects by increasing the ozone dosage. The sample which was grown at 30 sec ozone pulse duration shows about 98% of the woken-up Pr at the pristine state while those grown below 5 sec ozone pulse time show a pinched hysteresis loop, undergone a large wake-up effect. This behavior is attributed to the increase in oxygen vacancy and carbon concentration in the films deposited at insufficient O3 dosage which was confirmed by x-ray photoelectron spectroscopy (XPS). X-ray diffraction (XRD) scan shows that the increase of ozone pulse time yields in the reduction of tetragonal phase; therefore, the dielectric constant reduces. The I-V measurements reveal the increase of current density as the ozone dosage decreases which might be due to the generation of oxygen vacancies in the deposited film. Finally, we have investigated the dynamics of wake-up effect and it appears to be explained well by Johnson-Mehl-Avrami-Kolmogoroff model which is based on structural phase transformation.
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