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Register a new userHigh brightness diode-pumped organic solid-state laser
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Zhuang Zhao
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High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.
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Continuous-wave mode-locked femtosecond 2 um solid-state laser with a c-cut Tm:CaYAlO4 as gain medium was experimentally demonstrated. The mode locked laser generated stable pulses with average output power as high as 531 mW, pulse duration of 496 fs, and repetition rate of 97 MHz at 1975 nm. The research results show that Tm:CaYAlO4 is an excellent gain medium for femtosecond pulse generation at 2um wavelength.
Laser brightness is a measure of the ability to de- liver intense light to a target, and encapsulates both the energy content and the beam quality. High brightness lasers requires that both parameters be maximised, yet standard laser cavities do not allow this. For example, in solid-state lasers multimode beams have a high energy content but low beam quality, while Gaussian modes have a small mode volume and hence low energy extraction, but in a good quality mode. Here we over- come this fundamental limitation and demonstrate an optimal approach to realising high brightness lasers. We employ intra- cavity beam shaping to produce a Gaussian mode that carries all the energy of the multimode beam, thus energy extraction and beam quality are simultaneously maximised. This work will have a significant influence on the design of future high brightness laser cavities.
the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.
We demonstrated a 967 nm diode end-pumped Er:GSGG laser operated at 2.794 Micrometer with spectrum width 3.6 nm in the continuous wave(CW) mode. The maximum output power of 440 mW is obtained at an incident pumping power of 3.4 W, which corresponds to an optical-to-optical efficiency of 13% and slope efficiency of 13.2%. The results suggest that short cavity and efficient cooling setup for crystal are advantageous to improve laser performance.
Stable 30 fs pulses centered at 1068 nm (less than 10 optical cycles) are demonstrated in a diode pumped Yb:CaYAlO4 laser by using high-quality chemical vapor deposited monolayer graphene as the saturable absorber. The mode locked 8.43 optical-cycle pulses have a spectral bandwidth of ~ 50 nm and a pulse repetition frequency of ~ 113.5 MHz. To our knowledge, this is the shortest pulse ever reported for graphene mode-locked lasers and mode-locked Yb-doped bulk lasers. Our experimental results demonstrate that graphene mode locking is a very promising practical technique to generate few-cycle optical pulses directly from a laser oscillator.
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