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A new, modular toolkit for creating simulations of 2D X-ray pixel detectors, X-CSIT (X-ray Camera SImulation Toolkit), is being developed. The toolkit uses three sequential simulations of detector processes which model photon interactions, electron charge cloud spreading with a high charge density plasma model and common electronic components used in detector readout. In addition, because of the wide variety in pixel detector design, X-CSIT has been designed as a modular platform so that existing functions can be modified or additional functionality added if the specific design of a detector demands it. X-CSIT will be used to create simulations of the detectors at the European XFEL, including three bespoke 2D detectors: the Adaptive Gain Integrating Pixel Detector (AGIPD), Large Pixel Detector (LPD) and DePFET Sensor with Signal Compression (DSSC). These simulations will be used by the detector group at the European XFEL for detector characterisation and calibration. For this purpose, X-CSIT has been integrated into the European XFELs software framework, Karabo. This will further make it available to users to aid with the planning of experiments and analysis of data. In addition, X-CSIT will be released as a standalone, open source version for other users, collaborations and groups intending to create simulations of their own detectors.
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The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $mathrm{mathbf{mu m}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $mathbf{e^+ e^-}$ collider.
Pixel detectors have been the working horse for high resolution, high rate and radiation particle tracking for the past 20 years. The field has spun off into imaging applications with equal uniqueness. Now the move is towards larger integration and fully monolithic devices with to be expected spin-off into imaging again. Many judices and prejudices that were around at times were overcome and surpassed. This paper attempts to give an account of the developments following a line of early prejudices and later insights.
Modern photon counting pixel detectors enabled a revolution in applications at synchrotron light sources and beyond in the last decade. One of the limitations of current detectors is reduced counting linearity or even paralysis at high counting rates, due to dead-time which results in photon pile-up. Existing dead-time and pile-up models fail to reproduce the complexity of dead-time effects on photon counting, resulting in empirical calibrations for particular detectors at best, imprecise linearization methods, or no linearization. This problem will increase in the future as many synchrotron light sources plan significant brilliance upgrades and free-electron lasers plan moving to a quasi-continuous operation mode. We present here the first models that use the actual behavior of the analog pre-amplifiers in spectroscopic photon counting pixel detectors with constant current discharge (e.g., Medipix family of detectors) to deduce more accurate analytical models and optimal linearization methods. In particular, for detectors with at least two counters per pixel, we completely eliminate the need of calibration, or previous knowledge of the detector and beam parameters (dead-time, integration time, large sets of synchrotron filling patterns). This is summarized in several models with increasing complexity and accuracy. Finally, we present a general empirical approach applicable to any particular cases where the analytical approach is not sufficiently precise.
We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are here discussed.
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.
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