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Register a new userTantalum Monoarsenide: an Exotic Compensated Semimetal
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Compared with the semiconductors such as silicon and gallium arsenide which have been used widely for decades, semimetals have not received much attention in the field of condensed matter physics until very recently. The realization of electronic topological properties has motivated interest of investigations on Dirac semimetals and Weyl semimetals, which are predicted to show unprecedented features beyond the classical electronic theories of metals. In this letter for the first time we report the electric transport properties of a robust Weyl semimetal candidate proposed by recent theoretical calculations, TaAs. Our study shows that this bulk material manifests ultrahigh carrier mobility ($mathrm{5times10^5 cm^2/Vcdot{s}}$) accompanied by an extremely large, unsaturated linear magnetoresistance ($mathrm{MR}$), which reaches 5400 at 10 Kelvins in a magnetic field of 9 Teslas and 2.47$times$10$^4$ at 1.5 Kelvins in a magnetic field of 56 Teslas. We also observed strong Shubnikov-de Haas (SdH) oscillations associated with an extremely low quantum limit ($sim$8 Teslas). Further studies on TaAs, especially in the ultraquantum limit regime, will help to extend the realization of the topological properties of these exotic electrons.
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We show that the charge and thermal transport measurements on ultraclean crystals of URu2Si2 reveal a number of unprecedented superconducting properties. The uniqueness is best highlighted by the peculiar field dependence of thermal conductivity including the first order transition at Hc2 with a reduction of entropy flow. This is a consequence of multi-band superconductivity with compensated electronic structure in the hidden order state of this system. We provide strong evidence for a new type of unconventional superconductivity with two distinct gaps having different nodal topology.
We report a topological semimetal W2As3 with a space group C2/m. Based on the first-principles calculations, band crossings are partially gapped when spin-orbit coupling is included. The Z2 indices at the electron filling are [1;111], characterizing a strong topological insulator and topological surface states. From the magnetotransport measurements, nearly quadratic field dependence of magnetoresistance (MR) (B || [200]) at 3 K indicates an electron-hole compensated compound whose longitudinal MR reaches 115 at 3 K and 15 T. In addition, multiband features are detected from the high-magnetic-field Shubnikov-de Haas (SdH) oscillation, Hall resistivity, and band calculations. A nontrivial pi Berrys phase is obtained, suggesting the topological feature of this material. A two- band model can fit well the conductivity and Hall coefficient. Our experiments manifest that the transport properties of W2As3 are in good agreement with the theoretical calculations.
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center $Gamma$ and one ellipsoidal electron FS at the BZ boundary $X$. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but share many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.
Superconducting Tunnel Junctions (STJs) are currently being developed as photon detectors for a wide range of applications. Interest comes from their ability to cumulate photon counting with chromaticity (i.e. energy resolution) from the near infrared (2 $mu$m) to the X-rays wavelengths and good quantum efficiency up to 80%. Resolving power can exceed 10 in the visible wavelength range. Our main goal is to use STJs for astronomical observations at low light level in the near infrared. This paper put the emphasis on two main points: the improvement of the tantalum absorber epitaxy and the development of a new version of the fabrication process for making Ta/Al-AlOx-Al/Ta photon counting STJs. The main features of this process are that pixels have aligned electrodes and vias patterned through a protecting SiO2 layer. These vias are then used to contact the top electrode layer. We use a double thin aluminum trapping layer on top of a 150 nm thick Ta absorber grown epitaxially. Photon counting experiments with Ta junction array are presented at lambda = 0.78 $mu$m. Digital filtering methods are used to compute the photon counting data in order to minimize the effects of noise.
The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross-section and they are much more resistive than Cu, the effective conductance of an ultra-scaled interconnect will be compromised by the thick bilayer. Therefore, two dimensional (2D) layered materials have been explored as diffusion barrier alternatives. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back-end-of-line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. Here, a 2D layered tantalum sulfide (TaSx) with ~1.5 nm thickness is developed to replace the conventional TaN/Ta bilayer. The TaSx ultra-thin film is industry-friendly, BEOL-compatible, and can be directly prepared on dielectrics. Our results show superior barrier/liner properties of TaSx compared to the TaN/Ta bilayer. This single-stack material, serving as both a liner and a barrier, will enable continued scaling of interconnects beyond 5 nm node.
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