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Register a new userTantalum STJ for Photon Counting Detectors
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Authors
Corentin Jorel
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Superconducting Tunnel Junctions (STJs) are currently being developed as photon detectors for a wide range of applications. Interest comes from their ability to cumulate photon counting with chromaticity (i.e. energy resolution) from the near infrared (2 $mu$m) to the X-rays wavelengths and good quantum efficiency up to 80%. Resolving power can exceed 10 in the visible wavelength range. Our main goal is to use STJs for astronomical observations at low light level in the near infrared. This paper put the emphasis on two main points: the improvement of the tantalum absorber epitaxy and the development of a new version of the fabrication process for making Ta/Al-AlOx-Al/Ta photon counting STJs. The main features of this process are that pixels have aligned electrodes and vias patterned through a protecting SiO2 layer. These vias are then used to contact the top electrode layer. We use a double thin aluminum trapping layer on top of a 150 nm thick Ta absorber grown epitaxially. Photon counting experiments with Ta junction array are presented at lambda = 0.78 $mu$m. Digital filtering methods are used to compute the photon counting data in order to minimize the effects of noise.
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Modern photon counting pixel detectors enabled a revolution in applications at synchrotron light sources and beyond in the last decade. One of the limitations of current detectors is reduced counting linearity or even paralysis at high counting rates, due to dead-time which results in photon pile-up. Existing dead-time and pile-up models fail to reproduce the complexity of dead-time effects on photon counting, resulting in empirical calibrations for particular detectors at best, imprecise linearization methods, or no linearization. This problem will increase in the future as many synchrotron light sources plan significant brilliance upgrades and free-electron lasers plan moving to a quasi-continuous operation mode. We present here the first models that use the actual behavior of the analog pre-amplifiers in spectroscopic photon counting pixel detectors with constant current discharge (e.g., Medipix family of detectors) to deduce more accurate analytical models and optimal linearization methods. In particular, for detectors with at least two counters per pixel, we completely eliminate the need of calibration, or previous knowledge of the detector and beam parameters (dead-time, integration time, large sets of synchrotron filling patterns). This is summarized in several models with increasing complexity and accuracy. Finally, we present a general empirical approach applicable to any particular cases where the analytical approach is not sufficiently precise.
We present the development of a second generation digital readout system for photon counting microwave kinetic inductance detector (MKID) arrays operating in the optical and near-IR wavelength bands. Our system retains much of the core signal processing architecture from the first generation system, but with a significantly higher bandwidth, enabling readout of kilopixel MKID arrays. Each set of readout boards is capable of reading out 1024 MKID pixels multiplexed over 2 GHz of bandwidth; two such units can be placed in parallel to read out a full 2048 pixel microwave feedline over a 4 -- 8 GHz band. As in the first generation readout, our system is capable of identifying, analyzing, and recording photon detection events in real time with a time resolution of order a few microseconds. Here, we describe the hardware and firmware, and present an analysis of the noise properties of the system. We also present a novel algorithm for efficiently suppressing IQ mixer sidebands to below -30 dBc.
Compared with the semiconductors such as silicon and gallium arsenide which have been used widely for decades, semimetals have not received much attention in the field of condensed matter physics until very recently. The realization of electronic topological properties has motivated interest of investigations on Dirac semimetals and Weyl semimetals, which are predicted to show unprecedented features beyond the classical electronic theories of metals. In this letter for the first time we report the electric transport properties of a robust Weyl semimetal candidate proposed by recent theoretical calculations, TaAs. Our study shows that this bulk material manifests ultrahigh carrier mobility ($mathrm{5times10^5 cm^2/Vcdot{s}}$) accompanied by an extremely large, unsaturated linear magnetoresistance ($mathrm{MR}$), which reaches 5400 at 10 Kelvins in a magnetic field of 9 Teslas and 2.47$times$10$^4$ at 1.5 Kelvins in a magnetic field of 56 Teslas. We also observed strong Shubnikov-de Haas (SdH) oscillations associated with an extremely low quantum limit ($sim$8 Teslas). Further studies on TaAs, especially in the ultraquantum limit regime, will help to extend the realization of the topological properties of these exotic electrons.
The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross-section and they are much more resistive than Cu, the effective conductance of an ultra-scaled interconnect will be compromised by the thick bilayer. Therefore, two dimensional (2D) layered materials have been explored as diffusion barrier alternatives. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back-end-of-line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. Here, a 2D layered tantalum sulfide (TaSx) with ~1.5 nm thickness is developed to replace the conventional TaN/Ta bilayer. The TaSx ultra-thin film is industry-friendly, BEOL-compatible, and can be directly prepared on dielectrics. Our results show superior barrier/liner properties of TaSx compared to the TaN/Ta bilayer. This single-stack material, serving as both a liner and a barrier, will enable continued scaling of interconnects beyond 5 nm node.
We develop a simple coordinate transformation which can be employed to compensate for the nonlinearity introduced by a Microwave Kinetic Inductance Detectors (MKID) homodyne readout scheme. This coordinate system is compared to the canonically used polar coordinates and is shown to improve the performance of the filtering method often used to estimate a photons energy. For a detector where the coordinate nonlinearity is primarily responsible for limiting its resolving power, this technique leads to increased dynamic range, which we show by applying the transformation to data from a hafnium MKID designed to be sensitive to photons with wavelengths in the 800 to 1300 nm range. The new coordinates allow the detector to resolve photons with wavelengths down to 400 nm, raising the resolving power at that wavelength from 6.8 to 17.
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