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Register a new userEmergence of a ZO Kohn anomaly in quasi-freestanding epitaxial graphene
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In neutral graphene, two prominent cusps known as Kohn anomalies are found in the phonon dispersion of the highest optical phonon at $q=Gamma$ (LO branch) and $q=K$ (TO branch), reflecting a significant electron-phonon coupling to undoped Dirac electrons. In this work, high-resolution electron energy loss spectroscopy is used to measure the phonon dispersion around the $Gamma$ point in quasi-freestanding graphene epitaxially grown on Pt(111). The Kohn anomaly for the LO phonon is observed at finite momentum $qsim2k_F$ from $Gamma$, with a shape in excellent agreement with the theory and consistent with known values of the EPC and the Fermi level. More strikingly, we also observe a Kohn anomaly at the same momentum for the out-of-plane optical phonon (ZO) branch. This observation is the first direct evidence of the coupling of the ZO mode with Dirac electrons, which is forbidden for freestanding graphene but becomes allowed in the presence of a substrate. Moreover, we estimate the EPC to be even greater than that of the LO mode, making graphene on Pt(111) an optimal system to explore the effects of this new coupling in the electronic properties.
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The interplay of electron-phonon (el-ph) and electron-electron (el-el) interactions in epitaxial graphene is studied by directly probing its electronic structure. We found a strong coupling of electrons to the soft part of the A1g phonon evident by a kink at 150+/-15 meV, while the coupling of electrons to another expected phonon E2g at 195 meV can only be barely detected. The possible role of the el-el interaction to account for the enhanced coupling of electrons to the A1g phonon, and the contribution of el-ph interaction to the linear imaginary part of the self energy at high binding energy are also discussed. Our results reveal the dominant role of the A1g phonon in the el-ph interaction in graphene, and highlight the important interplay of el-el and el-ph interactions in the self energy of graphene.
The dispersion of electrons and phonons near the K point of bilayer graphene was investigated in a resonant Raman study using different laser excitation energies in the near infrared and visible range. The electronic structure was analyzed within the tight-binding approximation, and the Slonczewski-Weiss-McClure (SWM) parameters were obtained from the analysis of the dispersive behavior of the Raman features. A softening of the phonon branches was observed near the K point, and results evidence the Kohn anomaly and the importance of considering electron-phonon and electron-electron interactions to correctly describe the phonon dispersion in graphene systems.
Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the high-symmetry points Gamma and K in the phonon dispersion of two-dimensional graphene, where the phonon wave-vector connects two points on the Fermi surface. The linear slope around the kinks in the highest optical branch is proportional to the electron-phonon coupling. Here, we present a combined theoretical and experimental study of the influence of the dielectric substrate on the vibrational properties of graphene. We show that screening by the dielectric substrate reduces the electron-phonon coupling at the high-symmetry point K and leads to an up-shift of the Raman 2D-line. This results in the observation of a Kohn anomaly that can be tuned by screening. The exact position of the 2D-line can thus be taken also as a signature for changes in the (electron-phonon limited) conductivity of graphene.
We apply scanning tunneling spectroscopy to determine the bandgaps of mono-, bi- and trilayer MoS$_2$ grown on a graphene single crystal on Ir(111). Besides the typical scanning tunneling spectroscopy at constant height, we employ two additional spectroscopic methods giving extra sensitivity and qualitative insight into the $k$-vector of the tunneling electrons. Employing this comprehensive set of spectroscopic methods in tandem, we deduce a bandgap of $2.53pm0.08$ eV for the monolayer. This is close to the predicted values for freestanding MoS$_2$ and larger than is measured for MoS$_2$ on other substrates. Through precise analysis of the `comprehensive tunneling spectroscopy we also identify critical point energies in the mono- and bilayer MoS$_2$ band structures. These compare well with their calculated freestanding equivalents, evidencing the graphene/Ir(111) substrate as an excellent environment upon which to study the many feted electronic phenomena of monolayer MoS$_2$ and similar materials. Additionally, this investigation serves to expand the fledgling field of the comprehensive tunneling spectroscopy technique itself.
We show that the recently observed superconductivity in twisted bilayer graphene (TBG) can be explained as a consequence of the Kohn-Luttinger (KL) instability which leads to an effective attraction between electrons with originally repulsive interaction. Usually, the KL instability takes place at extremely low energy scales, but in TBG, a doubling and subsequent strong coupling of the van Hove singularities (vHS) in the electronic spectrum occurs as the magic angle is approached, leading to extended saddle points in the highest valence band (VB) with almost perfect nesting between states belonging to different valleys. The highly anisotropic screening induces an effective attraction in a $p$-wave channel with odd parity under the exchange of the two disjoined patches of the Fermi line. We also predict the appearance of a spin-density wave (SDW) instability, adjacent to the superconducting phase, and the opening of a gap in the electronic spectrum from the condensation of spins with wave vector corresponding to the nesting vector close to the vHS.
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