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Register a new userGeneration and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
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Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically control broken inversion symmetry or Berry curvature as well as the carrier density to generate and detect the pure valley current. We find a large nonlocal resistance and a cubic scaling between the nonlocal resistance and the local resistivity in the insulating regime at zero-magnetic field and 70 K as evidence of the pure valley current. The electrical control of the valley current in the limit of zero conductivity allows non-dissipative induction of valley current from electric field and thus provides a significant contribution to the advancement of non-dissipative electronics.
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We propose a practical scheme to generate a pure valley current in monolayer transition metal dichalcogenides by one-photon absorption of linearly polarized light. We show that the pure valley current can be detected by either photoluminescence measurements or the ultrafast pump-probe technique. Our method, together with the previously demonstrated generation of valley polarization, opens up the exciting possibility of ultrafast optical-only manipulation of the valley index. The tilted field effect on the valley current in experiment is also discussed.
Since its discovery, Berry phase has been demonstrated to play an important role in many quantum systems. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2pi, which offers a unique opportunity to explore the tunable Berry phase on the physical phenomena. Here, we report experimental observation of Berry phases-induced valley splitting and crossing in moveable bilayer graphene p-n junction resonators. In our experiment, the bilayer graphene resonators are generated by combining the electric field of scanning tunneling microscope tip with the gap of bilayer graphene. A perpendicular magnetic field changes the Berry phase of the confined bound states in the resonators from zero to 2pi continuously and leads to the Berry phase difference for the two inequivalent valleys in the bilayer graphene. As a consequence, we observe giant valley splitting and unusual valley crossing of the lowest bound states. Our results indicate that the bilayer graphene resonators can be used to manipulate the valley degree of freedom in valleytronics.
We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting zero-lines, we find that (i) the incoming current can be partitioned into both left-right adjacent topological channels and that (ii) the forward-propagating current is nonzero. By tuning the Fermi energy from the charge-neutrality point to a band edge, the currents partitioned into the three outgoing channels become nearly equal. Moreover, we find that current partition node can be designed as a perfect valley filter and energy splitter controlled by electric gating. By changing the relative electric field magnitude, the intersection of three topological zero-lines can transform smoothly into a single zero line, and the current partition can be controlled precisely. We explore the available methods for modulating this device systematically by changing the Fermi energy, the energy gap size, and the size of central gapless region. The current partition is also influenced by magnetic fields and the system size. Our results provide a microscopic depiction of the electronic transport properties around a unit cell of minimally twisted bilayer graphene and have far-reaching implications in the design of electron-beam splitters and interferometer devices.
Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moire bands with opposite Chern number [Science 367, 900 (2020), Science 365, 605 (2019)]. It was observed that a small DC current is able to switch the valley polarization and reverse the sign of the Hall conductance [Science 367, 900 (2020), Science 365, 605 (2019)]. Here, we discuss the mechanism of the current switching of valley polarization near the transition temperature, where bulk dissipative transport dominates. We show that for a sample with rotational symmetry breaking, a DC current may generate an electron density difference between the two valleys (valley density difference). The current induced valley density difference in turn induces a first order transition in the valley polarization. We emphasize that the inter-valley scattering plays a central role since it is the channel for exchanging electrons between the two valleys. We further estimate the valley density difference in the TBG/h-BN system with a microscopic model, and find a significant enhancement of the effect in the magic angle regime.
Berry phase plays an important role in determining many physical properties of quantum systems. However, a Berry phase altering energy spectrum of a quantum system is comparatively rare. Here, we report an unusual tunable valley polarized energy spectra induced by continuously tunable Berry phase in Bernal-stacked bilayer graphene quantum dots. In our experiment, the Berry phase of electron orbital states is continuously tuned from about pi to 2pi by perpendicular magnetic fields. When the Berry phase equals pi or 2pi, the electron states in the two inequivalent valleys are energetically degenerate. By altering the Berry phase to noninteger multiples of pi, large and continuously tunable valley polarized energy spectra are detected in our experiment. The observed Berry phase-induced valley splitting, on the order of 10 meV at a magnetic field of 1 T, is about 100 times larger than Zeeman splitting for spin, shedding light on graphene-based valleytronics.
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