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Register a new userKekule textures, pseudo-spin one Dirac cones and quadratic band crossings in a graphene-hexagonal indium chalcogenide bilayer
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Added by
Gianluca Giovannetti GG
Publication date
2014
fields
Physics
and research's language is
English
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Using density-functional theory, we calculate the electronic bandstructure of single-layer graphene on top of hexagonal In_2Te_2 monolayers. The geometric configuration with In and Te atoms at centers of carbon hexagons leads to a Kekule texture with an ensuing bandgap of 20 meV. The alternative structure, nearly degenerate in energy, with the In and Te atoms on top of carbon sites is characterized instead by gapless spectrum with the original Dirac cones of graphene reshaped, depending on the graphene-indium chalcogenide distance, either in the form of an undoubled pseudo-spin one Dirac cone or in a quadratic band crossing point at the Fermi level. These electronic phases harbor charge fractionalization and topological Mott insulating states of matter.
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Epitaxial graphene on Ir(111) prepared in excellent structural quality is investigated by angle-resolved photoelectron spectroscopy. It clearly displays a Dirac cone with the Dirac point shifted only slightly above the Fermi level. The moire resulting from the overlaid graphene and Ir(111) surface lattices imposes a superperiodic potential giving rise to Dirac cone replicas and the opening of minigaps in the band structure.
We revisit the effect of local interactions on the quadratic band touching (QBT) of Bernal stacked bilayer graphene models using renormalization group (RG) arguments and quantum Monte Carlo simulations of the Hubbard model. We present an RG argument which predicts, contrary to previous studies, that weak interactions do not flow to strong coupling even if the free dispersion has a QBT. Instead they generate a linear term in the dispersion, which causes the interactions to flow back to weak coupling. Consistent with this RG scenario, in unbiased quantum Monte Carlo simulations of the Hubbard model we find compelling evidence that antiferromagnetism turns on at a finite $U/t$, despite the $U=0$ hopping problem having a QBT. The onset of antiferromagnetism takes place at a continuous transition which is consistent with a dynamical critical exponent $z=1$ as expected for 2+1 d Gross-Neveu criticality. We conclude that generically in models of bilayer graphene, even if the free dispersion has a QBT, small local interactions generate a Dirac phase with no symmetry breaking and that there is a finite-coupling transition out of this phase to a symmetry-broken state.
Graphene/h-BN has emerged as a model van der Waals heterostructure, and the band structure engineering by the superlattice potential has led to various novel quantum phenomena including the self-similar Hofstadter butterfly states. Although newly generated second generation Dirac cones (SDCs) are believed to be crucial for understanding such intriguing phenomena, so far fundamental knowledge of SDCs in such heterostructure, e.g. locations and dispersion of SDCs, the effect of inversion symmetry breaking on the gap opening, still remains highly debated due to the lack of direct experimental results. Here we report first direct experimental results on the dispersion of SDCs in 0$^circ$ aligned graphene/h-BN heterostructure using angle-resolved photoemission spectroscopy. Our data reveal unambiguously SDCs at the corners of the superlattice Brillouin zone, and at only one of the two superlattice valleys. Moreover, gaps of $approx$ 100 meV and $approx$ 160 meV are observed at the SDCs and the original graphene Dirac cone respectively. Our work highlights the important role of a strong inversion symmetry breaking perturbation potential in the physics of graphene/h-BN, and fills critical knowledge gaps in the band structure engineering of Dirac fermions by a superlattice potential.
Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice system, which possesses an incommensurate moire pattern and uncommon electronic behaviors may appear due to the absence of phase coherence. Such system is extremely sensitive to further twist and many intriguing phenomena will occur. In this work, based on first-principles calculations we show that, for further twist near 30 degree, there could induce dramatically different dielectric behaviors of electron between left and right twisted cases. Specifically, it is found that the left and right twists show suppressed and amplified dielectric response under vertical electric field, respectively. Further analysis demonstrate that such exotic dielectric property can be attributed to the stacking dependent charge redistribution due to twist, which forms twist-dependent pseudospin textures. We will show that such pseudospin textures are robust under small electric field. As a result, for the right twisted case, there is almost no electric dipole formation exceeding the monolayer thickness when the electric field is applied. Whereas for the left case, the system could even demonstrate negative susceptibility, i.e. the induced polarization is opposite to the applied field, which is very rare in the nature. Such findings not only enrich our understanding on moire systems but also open an appealing route toward functional 2D materials design for electronic, optical and even energy storage devices.
Topological semimetals exhibit band crossings near the Fermi energy, which are protected by the nontrivial topological character of the wave functions. In many cases, these topological band degeneracies give rise to exotic surface states and unusual magneto-transport properties. In this paper, we present a complete classification of all possible nonsymmorphic band degeneracies in hexagonal materials with strong spin-orbit coupling. This includes (i) band crossings protected by conventional nonsymmorphic symmetries, whose partial translation is within the invariant space of the mirror/rotation symmetry; and (ii) band crossings protected by off-centered mirror/rotation symmetries, whose partial translation is orthogonal to the invariant space. Our analysis is based on (i) the algebraic relations obeyed by the symmetry operators and (ii) the compatibility relations between irreducible representations at different high-symmetry points of the Brillouin zone. We identify a number of existing materials where these nonsymmorphic nodal lines are realized. Based on these example materials, we examine the surface states that are associated with the topological band crossings. Implications for experiments and device applications are briefly discussed.
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