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Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies

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 Added by Alberta Bonanni
 Publication date 2014
  fields Physics
and research's language is English




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A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0{alpha} in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensitivity of weak-localization phenomena to symmetry breaking perturbations (such as spin-splitting and spin-disorder scattering) is exploited to evaluate the magnitude of N0{alpha} for n-type wurtzite (Ga,Mn)N:Si films grown by metalorganic vapor phase epitaxy. Millikelvin magnetoresistance studies and their quantitative interpretation point to N0{alpha} < 40 meV, a value at least 5 times smaller than the one found with similar measurements on, e.g., $n$-(Zn,Mn)O. It is shown that this striking difference in the values of the s-d coupling between $n$-type III-V and II-VI dilute magnetic semiconductors can be explained by a theory that takes into account the acceptor character of Mn in III-V compounds.



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We present an experimental study for polycrystalline samples of the diluted magnetic semiconductor Mn(x)Ga(1-x)N (x<0.04) in order to address some of the existing controversial issues. Different techniques were used to characterize the electronic, magnetic, and structural properties of the samples, and inelastic neutron scattering was employed to determine the magnetic excitations associated with Mn monomers and dimers. Our main conclusions are as follows: (i) The valence of the Mn ions is 2+. (ii) The Mn(2+) ions experience a substantial single-ion axial anisotropy with parameter D=0.027(3) meV. (iii) Nearest-neighbor Mn(2+) ions are coupled antiferromagnetically. The exchange parameter J= 0.140(7) meV is independent of the Mn content x, i.e., there is no evidence for hole-induced modifications of J towards a potentially high Curie temperature postulated in the literature.
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