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Register a new userHigh Curie temperatures in (Ga,Mn)N from Mn clustering
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The effect of microscopic Mn cluster distribution on the Curie temperature (Tc) is studied using density-functional calculations. We find that the calculated Tc depends crucially on the microscopic cluster distribution, which can explain the abnormally large variations in experimental Tc values from a few K to well above room temperature. The partially dimerized Mn_2-Mn_1 distribution is found to give the highest Tc > 500 K, and in general, the presence of the Mn_2 dimer has a tendency to enhance Tc. The lowest Tc values close to zero are obtained for the Mn_4-Mn_1 and Mn_4-Mn_3 distributions.
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We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest Tc values for growth temperatures very close to the 2D-3D phase boundary. The increase in Tc, due to the removal of interstitial Mn by post growth annealing, is counteracted by a second process which reduces Tc and which is more effective at higher annealing temperatures. Our results show that it is necessary to optimize the growth parameters and post growth annealing procedure to obtain the highest Tc.
We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material - suggesting that the free surface of Ga1-xMnxAs epilayers is important in determining their physical properties.
We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band.
The magnetic properties of dilute magnetic semiconductors (DMS) are calculated from first-principles by mapping the ab initio results on a classical Heisenberg model. It is found that the range of the exchange interaction in (Ga, Mn)N is very short ranged due to the exponential decay of the impurity wave function in the gap. Curie temperatures (Tc) of DMS are calculated by using the Monte Carlo method. It is found that the Tc values of (Ga, Mn)N are very low since, due to the short ranged interaction, percolation of the ferromagnetic coupling is difficult to achieve for small concentrations.
The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced modifications are strongly accelerated if the treatment is carried out under As capping. This means that the modification rate is not limited by the diffusion process, but rather by the surface trapping of the diffusing species.
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