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Register a new userOptical responses and optical activity of ultrathin films of topological insulator
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We investigate the optical properties of an ultrathin film of a topological insulator in the presence of an in-plane magnetic field. We show that due to the combination of the overlap between the surface states of the two layers and the magnetic field, the optical conductivity can show strong anisotropy. This leads to the effective optical activity of the ultrathin film by influencing the circularly polarized incident light. Intriguingly, for a range of magnetic fields, the reflected and transmitted lights exhibit elliptic character. Even for certain values almost linear polarizations are obtained, indicating that the thin film can act as a polaroid in reflection. All these features are discussed in the context of the time reversal symmetry breaking as one of key ingredients for the optical activity.
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Topological insulator films are promising materials for optoelectronics due to a strong optical absorption and a thickness dependent band gap of the topological surface states. They are superior candidates for photodetector applications in the THz-infrared spectrum, with a potential performance higher than graphene. Using a first-principles $kcdot p$ Hamiltonian, incorporating all symmetry-allowed terms to second order in the wave vector $k$, first order in the strain $epsilon$ and of order $epsilon k$, we demonstrate significantly improved optoelectronic performance due to strain. For Bi$_2$Se$_3$ films of variable thickness, the surface state band gap, and thereby the optical absorption, can be effectively tuned by application of uniaxial strain, $epsilon_{zz}$, leading to a divergent band edge absorbance for $epsilon_{zz}gtrsim 6%$. Shear strain breaks the crystal symmetry and leads to an absorbance varying significantly with polarization direction. Remarkably, the directional average of the absorbance always increases with strain, independent of material parameters.
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Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunneling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We observe strongly binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultra-thin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model which captures this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device.
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