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Register a new userGHz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm
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We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for gate transient suppression. It can operate nearly dead time free, except for the one clock cycle dead time intrinsic to self-differencing, and we demonstrate a count rate of 500 Mcps. We present a careful analysis of the optimal driving conditions of the APD measured with a dead time free detector characterization setup. It is found that a shortened gate width of 360 ps together with an increased driving signal amplitude and operation at higher temperatures leads to improved performance of the detector. We achieve an afterpulse probability of 7% at 50% detection efficiency with dead time free measurement and a record efficiency for InGaAs/InP APDs of 55% at an afterpulse probability of only 10.2% with a moderate dead time of 10 ns.
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Generally, a superconducting nanowire single-photon detector (SNSPD) is composed of wires with a typical width of ~100 nm. Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons. Compared with the SNSPD, the superconducting microstrip single-photon detector (SMSPD) has smaller kinetic inductance, higher working current, and lower requirement in fabrication accuracy, providing potential applications in the development of ultra-large active area detectors. However, the study on SMSPD is still in its infancy, and the realization of its high-performance and practical use remains an opening question. This study demonstrates a NbN SMSPD with a saturated system detection efficiency (SDE) of ~92.2% at a dark count rate of ~200 cps, a polarization sensitivity of ~1.03, and a minimum timing jitter of ~48 ps, at the telecom wavelength of 1550 nm when coupled with a single mode fiber and operated at 0.84 K. Furthermore, the detectors SDE is over 70% when operated at a 2.1-K closed-cycle cryocooler.
We characterize a near-infrared single-photon detector based on an InGaAs/InP avalanche photodiode and the self-differencing post-processing technique. It operates at gate rates of 200 MHz and higher. The compact, integrated design employs printed circuit boards and features a semiconductor-based self-differencing subtraction implemented with a fully differential amplifier. At a single-photon detection efficiency of 6.4%, the detector has a dark count probability of 9x10^-7 per gate, an afterpulse probability of 6.3% per detection event, a detection time jitter of 150 ps, and a dead time of 5 ns (equivalent to one gate period). Furthermore, it can be operated as a standard photodiode, which benefits applications that require detecting single photons as well as strong light signals.
The fast development of superconducting nanowire single photon detector (SNSPD) in the past decade has enabled many advances in quantum information technology. The best system detection efficiency (SDE) record at 1550 nm wavelength was 93% obtained from SNSPD made of amorphous WSi which usually operated at sub-kelvin temperatures. We first demonstrate SNSPD made of polycrystalline NbN with SDE of 90.2% for 1550 nm wavelength at 2.1K, accessible with a compact cryocooler. The SDE saturated to 92.1% when the temperature was lowered to 1.8K. The results lighten the practical and high performance SNSPD to quantum information and other high-end applications.
Heralding of single photon at 1550 nm from pump pulsed non degenerate spontaneous parametric downconversion is demonstrated. P(1) and P(2) of our source are 0.1871 and 2.4 x 10 ^-3 respectively. Triggering of our source is 2.16 x 10^5 trigger.s^-1. This source may be used in QKD system.
Satellite-ground quantum communication requires single-photon detectors of 850-nm wavelength with both high detection efficiency and large sensitive area. We developed superconducting nanowire single-photon detectors (SNSPDs) on one-dimensional photonic crystals, which acted as optical cavities to enhance the optical absorption, with a sensitive-area diameter of 50 um. The fabricated multimode fiber coupled NbN SNSPDs exhibited a maximum system detection efficiency (DE) of up to 82% and a DE of 78% at a dark count rate of 100 Hz at 850-nm wavelength as well as a system jitter of 105 ps.
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