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Register a new userInterplay between Raman shift and thermal expansion in graphene: temperature-dependent measurements and analysis of substrate corrections
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Measurements and calculations have shown significant disagreement regarding the sign and variations of the thermal expansion coefficient (TEC) of graphene $alpha(T)$. Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride substrates and over the broad temperature range 150--900~K. The relation between those measurements for the G band and the graphene TEC, which involves correcting the measured signal for the mismatch contribution of the substrate, is analyzed based on various theoretical candidates for $alpha(T)$. Contrary to calculations in the quasiharmonic approximation, a many-body potential reparametrized for graphene correctly reproduces experimental data. These results indicate that the TEC is more likely to be positive above room temperature.
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The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with AlN and SiO$_2$, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MWm$^-$$^2$K$^-$$^1$ near room temperature, increasing as ~ T$^0$$^.$$^6$$^5$ in the range 300 - 600 K. The similar TBC of MoS$_2$ with the two substrates indicates that MoS$_2$ is the softer material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. Our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.
Thermal effects contributing to the Casimir interaction between objects are usually small at room temperature and they are difficult to separate from quantum mechanical contributions at higher temperatures. We propose that the thermal Casimir force effect can be observed for a graphene flake suspended in a fluid between substrates at the room temperature regime. The properly chosen materials for the substrates and fluid induce a Casimir repulsion. The balance with the other forces, such as gravity and buoyancy, results in a stable temperature dependent equilibrium separation. The suspended graphene is a promising system due to its potential for observing thermal Casimir effects at room temperature.
We calculate the temperature dependent conductivity of graphene in the presence of randomly distributed Coulomb impurity charges arising from the temperature dependent screening of the Coulomb disorder without any phonons. The purely electronic temperature dependence of our theory arises from two independent mechanisms: the explicit temperature dependence of the finite temperature dielectric function $epsilon(q,T)$ and the finite temperature energy averaging of the transport scattering time. We find that the calculated temperature dependent conductivity is non-monotonic, decreasing with temperature at low temperatures, and increasing at high temperatures. We provide a critical comparison with the corresponding physics in semiconductor-based parabolic band 2D electron gas systems.
The operation of quantum dots at highest possible temperatures is desirable for many applications. Capacitance-voltage spectroscopy (C(V)-spectroscopy) measurements are an established instrument to analyze the electronic structure and energy levels of self-assembled quantum dots (QDs). We perform C(V) in the dark and C(V) under the influence of non-resonant illumination, probing exciton states up to $X^{4+}$ on InAs QDs embedded in a GaAs matrix for temperatures ranging from 2.5 K to 120 K. While a small shift in the charging spectra resonance is observed for the two pure spin degenerate electron s-state charging voltages with increasing temperature, a huge shift is visible for the electron-hole excitonic states resonance voltages. The $s_2$-peak moves to slightly higher, the $s_1$-peak to slightly lower charging voltages. In contrast, the excitonic states are surprisingly charged at much lower voltages upon increasing temperature. We derive a rate-model allowing to attribute and value different contributions to these shifts. Resonant tunnelling, state degeneracy and hole generation rate in combination with the Fermi distribution function turn out to be of great importance for the observed effects. The differences in the shifting behavior is connected to different equilibria schemes for the peaks; s-peaks arise when tunneling-in- and out-rates become equal, while excitonic peaks occur, when electron tunneling-in- and hole-generation rates are balanced.
The honeycomb lattice sets the basic arena for numerous ideas to implement electronic, photonic, or phononic topological bands in (meta-)materials. Novel opportunities to manipulate Dirac electrons in graphene through band engineering arise from superlattice potentials as induced by a substrate such as hexagonal boron-nitride. Making use of the general form of a weak substrate potential as dictated by symmetry, we analytically derive the low-energy minibands of the superstructure, including a characteristic 1.5 Dirac cone deriving from a three-band crossing at the Brillouin zone edge. Assuming a large supercell, we focus on a single Dirac cone (or valley) and find all possible arrangements of the low-energy electron and hole bands in a complete six-dimensional parameter space. We identify the various symmetry planes in parameter space inducing gap closures and find the sectors hosting topological minibands, including also complex band crossings that generate a valley Chern number atypically larger than one. Our map provides a starting point for the systematic design of topological bands by substrate engineering.
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