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Floquet analysis of pulsed Dirac systems: A way to simulate rippled graphene

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 Added by Tapomoy Guha Sarkar
 Publication date 2014
  fields Physics
and research's language is English




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The low energy continuum limit of graphene is effectively known to be modeled using Dirac equation in (2+1) dimensions. We consider the possibility of using modulated high frequency periodic driving of a two-dimension system (optical lattice) to simulate properties of rippled graphene. We suggest that the Dirac Hamiltonian in a curved background space can also be effectively simulated by a suitable driving scheme in optical lattice. The time dependent system yields, in the approximate limit of high frequency pulsing, an effective time independent Hamiltonian that governs the time evolution, except for an initial and a final kick. We use a specific form of 4-phase pulsed forcing with suitably tuned choice of modulating operators to mimic the effects of curvature. The extent of curvature is found to be directly related to $omega^{-1}$ the time period of the driving field at the leading order. We apply the method to engineer the effects of curved background space. We find that the imprint of curvilinear geometry modifies the electronic properties, such as LDOS, significantly. We suggest that this method shall be useful in studying the response of various properties of such systems to non-trivial geometry without requiring any actual physical deformations.



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The exceptionally high mobility of carriers in graphene is one of its defining characteristics, especially in view of potential applications. Therefore it is of both practical and fundamental importance to understand the mechanisms responsible for limiting the values of mobility. The aim of the paper is to study theoretically one such mechanism, i.e. scattering on ripples. The transport properties of rippled graphene are studied using using single-band tight-binding model. Both the bond-length variation, corresponding to the vector potential in the effective mass picture, and fluctuating scalar potential are included in the formalism. The samples are modeled as self-similar surfaces characterized by the roughness exponent with values ranging from typical for graphene on SiO$_{2}$ to seen in suspended samples. The range of calculated resistivities and mobilities overlaps with experiment. The results presented here support the notion of rippling as one of the factors limiting the mobility.
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