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Register a new userGeneric Symmetry Breaking Instability of Topological Insulators due to a Novel van Hove Singularity
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We point out that in the deep band-inverted state, topological insulators are generically vulnerable against symmetry breaking instability, due to a divergently large density of states of 1D-like exponent near the chemical potential. This feature at the band edge is associated with a novel van Hove singularity resulting from the development of a Mexican-hat band dispersion. We demonstrate this generic behavior via prototypical 2D and 3D models. This realization not only explains the existing experimental observations of additional phases, but also suggests a route to activate additional functionalities to topological insulators via ordering, particularly for the long-sought topological superconductivities.
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We consider the generic problem of a two-level quantum emitter near a two-dimensional Chern insulator in the dipole approximation, and study how the frequency-dependent response and electronic density of states of the insulator modifies the transition rate of the emitter between the ground and excited levels. To this end, we obtain the full real-frequency behavior of the conductivity tensor by performing a tight-binding calculation based on the Qi-Wu-Zhang model and using a Kubo formula, and derive the full electromagnetic Green tensor of the system, which breaks Onsager reciprocity. This enables us to find that for frequencies smaller than the maximum band gap, the system is sensitive to time reversal symmetry-breaking, whereas for much larger frequencies the system becomes insensitive, with implications for the discrimination of the state of a circularly polarised dipole emitter. We also study the impact of a van Hove singularity on the surface-induced correction to the transition rate, finding that it can enhance its amplitude by a few orders of magnitude compared to the case where the conductivity is set to its static value. By considering configurations in which the dipole is circularly polarised or parallel with the surface of the Chern insulator, we find that the surface correction to the transition rate can exhibit a novel decay with sine integral-like oscillations.
Twisted graphene bilayers (TGBs) have low-energy van Hove singularities (VHSs) that are strongly localized around AA-stacked regions of the moire pattern. Therefore, they exhibit novel many-body electronic states, such as Mott-like insulator and unconventional superconductivity. Unfortunately, these strongly correlated states were only observed in magic angle TGBs with the twist angle theta~1.1{deg}, requiring a precisely tuned structure. Is it possible to realize exotic quantum phases in the TGBs not limited at the magic angle? Here we studied electronic properties of a TGB with theta~1.64{deg} and demonstrated that a VHS splits into two spin-polarized states flanking the Fermi energy when the VHS is close to the Fermi level. Such a result indicates that localized magnetic moments emerge in the AA-stacked regions of the TGB. Since the low-energy VHSs are quite easy to be reached in slightly TGBs, our result therefore provides a facile direction to realize novel quantum phases in graphene system.
A topological Dirac semimetal is a novel state of quantum matter which has recently attracted much attention as an apparent 3D version of graphene. In this paper, we report critically important results on the electronic structure of the 3D Dirac semimetal Na3Bi at a surface that reveals its nontrivial groundstate. Our studies, for the first time, reveal that the two 3D Dirac cones go through a topological change in the constant energy contour as a function of the binding energy, featuring a Lifshitz point, which is missing in a strict 3D analog of graphene (in other words Na3Bi is not a true 3D analog of graphene). Our results identify the first example of a band saddle point singularity in 3D Dirac materials. This is in contrast to its 2D analogs such as graphene and the helical Dirac surface states of a topological insulator. The observation of multiple Dirac nodes in Na3Bi connecting via a Lifshitz point along its crystalline rotational axis away from the Kramers point serves as a decisive signature for the symmetry-protected nature of the Dirac semimetals topological groundstate.
The most salient features observed around a metamagnetic transition in Sr3Ru2O7 are well captured in a simple model for spontaneous Fermi surface symmetry breaking under a magnetic field, without invoking a putative quantum critical point. The Fermi surface symmetry breaking happens in both a majority and a minority spin band but with a different magnitude of the order parameter, when either band is tuned close to van Hove filling by the magnetic field. The transition is second order for high temperature T and changes into first order for low T. The first order transition is accompanied by a metamagnetic transition. The uniform magnetic susceptibility and the specific heat coefficient show strong T dependence, especially a log T divergence at van Hove filling. The Fermi surface instability then cuts off such non-Fermi liquid behavior and gives rise to a cusp in the susceptibility and a specific heat jump at the transition temperature.
A van der Waals coupled Weyl semimetal material NbIrTe4 is investigated by combining scanning tunneling microscopy/spectroscopy and first principles calculations. We observe a sharp peak in the tunneling conductance near the zero bias energy, and its origin is ascribed to a van Hove singularity associated with a Lifshitz transition of the topologically none trivial Fermi arc states. Furthermore, tunneling spectroscopy measurements show a surprisingly large signature of electron boson coupling, which presumably represents anomalously enhanced electron phonon coupling through the enhanced charge susceptibility. Our finding in van der Waals coupled material is particularly invaluable due to applicable exfoliation technology for searching exotic topological states by further manipulating near Fermi energy van Hove singularity in nanometer scale flakes and their devices.
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