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Register a new userCurrent enhancement through a time dependent constriction in fractional topological insulators
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Added by
Giacomo Dolcetto Mr
Publication date
2014
fields
Physics
and research's language is
English
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We analyze the backscattering current induced by a time dependent constriction as a tool to probe fractional topological insulators. We demonstrate an enhancement of the total current for a fractional topological insulator induced by the dominant tunneling excitation, contrary to the decreasing present in the integer case for not too strong interactions. This feature allows to unambiguously identify fractional quasiparticles. Furthermore, the dominant tunneling processes, which may involve one or two quasiparticles depending on the interactions, can be clearly determined.
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Robust fractional charge localized at disclination defects has been recently found as a topological response in $C_{6}$ symmetric 2D topological crystalline insulators (TCIs). In this article, we thoroughly investigate the fractional charge on disclinations in $C_n$ symmetric TCIs, with or without time reversal symmetry, and including spinless and spin-$frac{1}{2}$ cases. We compute the fractional disclination charges from the Wannier representations in real space and use band representation theory to construct topological indices of the fractional disclination charge for all $2D$ TCIs that admit a (generalized) Wannier representation. We find the disclination charge is fractionalized in units of $frac{e}{n}$ for $C_n$ symmetric TCIs; and for spin-$frac{1}{2}$ TCIs, with additional time reversal symmetry, the disclination charge is fractionalized in units of $frac{2e}{n}$. We furthermore prove that with electron-electron interactions that preserve the $C_n$ symmetry and many-body bulk gap, though we can deform a TCI into another which is topologically distinct in the free fermion case, the fractional disclination charge determined by our topological indices will not change in this process. Moreover, we use an algebraic technique to generalize the indices for TCIs with non-zero Chern numbers, where a Wannier representation is not applicable. With the inclusion of the Chern number, our generalized fractional disclination indices apply for all $C_n$ symmetric TCIs. Finally, we briefly discuss the connection between the Chern number dependence of our generalized indices and the Wen-Zee term.
We consider transport properties of a two dimensional topological insulator in a double quantum point contact geometry in presence of a time-dependent external field. In the proposed setup an external gate is placed above a single constriction and it couples only with electrons belonging to the top edge. This asymmetric configuration and the presence of an ac signal allow for a quantum pumping mechanism, which, in turn, can generate finite heat and charge currents in an unbiased device configuration. A microscopic model for the coupling with the external time-dependent gate potential is developed and the induced finite heat and charge currents are investigated. We demonstrate that in the non-interacting case, heat flow is associated with a single spin component, due to the helical nature of the edge states, and therefore a finite and polarized heat current is obtained in this configuration. The presence of e-e interchannel interactions strongly affects the current signal, lowering the degree of polarization of the system. Finally, we also show that separate heat and charge flows can be achieved, varying the amplitude of the external gate.
The statistics of tunneling current in a fractional quantum Hall sample with an antidot is studied in the chiral Luttinger liquid picture of edge states. A comparison between Fano factor and skewness is proposed in order to clearly distinguish the charge of the carriers in both the thermal and the shot limit. In addition, we address effects on current moments of non-universal exponents in single-quasiparticle propagators. Positive correlations, result of propagators behaviour, are obtained in the shot noise limit of the Fano factor, and possible experimental consequences are outlined.
We consider extended Hubbard models with repulsive interactions on a Honeycomb lattice and the transitions from the semi-metal phase at half-filling to Mott insulating phases. In particular, due to the frustrating nature of the second-neighbor repulsive interactions, topological Mott phases displaying the quantum Hall and the quantum spin Hall effects are found for spinless and spinful fermion models, respectively. We present the mean-field phase diagram and consider the effects of fluctuations within the random phase approximation (RPA). Functional renormalization group analysis also show that these states can be favored over the topologically trivial Mott insulating states.
We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for a breaking of inversion and time-reversal symmetries and takes into account random local potentials as well as the Zeeman and orbital effects of external magnetic fields, we compute the local density of states, the single-particle spectral function, and the conductance for a (contacted) slab geometry by numerically exact techniques based on kernel polynomial expansion and Greens function approaches. We show that bulk disorder refills the suface-state Dirac gap induced by a homogeneous magnetic field with states, whereas orbital (Peierls-phase) disorder perserves the gap feature. The former effect is more pronounced in weak TIs than in strong TIs. At moderate randomness, disorder-induced conducting channels appear in the surface layer, promoting diffusive metallicity. Random Zeeman fields rapidly destroy any conducting surface states. Imprinting quantum dots on a TIs surface, we demonstrate that carrier transport can be easily tuned by varying the gate voltage, even to the point where quasi-bound dot states may appear.
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