No Arabic abstract
A new family of the low-buckled Dirac materials which includes silicene, germanene, etc. is expected to possess a more complicated sequence of Landau levels than in pristine graphene. Their energies depend, among other factors, on the strength of the intrinsic spin-orbit (SO) and Rashba SO couplings and can be tuned by an applied electric field $E_z$. We studied the influence of the intrinsic Rashba SO term on the energies of Landau levels using both analytical and numerical methods. The quantum magnetic oscillations of the density of states are also investigated. A specific feature of the oscillations is the presence of the beats with the frequency proportional to the field $E_z$. The frequency of the beats becomes also dependent on the carrier concentration when Rashba interaction is present allowing experimental determination of its strength.
The wavefunction of massless Dirac fermions is a two-component spinor. In graphene, a one-atom-thick film showing two-dimensional Dirac-like electronic excitations, the two-component representation reflects the amplitude of the electron wavefunction on the A and B sublattices. This unique property provides unprecedented opportunities to image the two components of massless Dirac fermions spatially. Here we report atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer by scanning tunnelling microscopy and spectroscopy. A gap of about 20 meV, driven by inversion symmetry breaking by the substrate potential, is observed in the graphene on both SiC and graphite substrates. Such a gap splits the n = 0 Landau level (LL) into two levels, 0+ and 0-. We demonstrate that the amplitude of the wavefunction of the 0- LL is mainly at the A sites and that of the 0+ LL is mainly at the B sites of graphene, characterizing the internal structure of the spinor of the n = 0 LL. This provides direct evidence of the two-component nature of massless Dirac fermions.
We investigate whether there could exist topological invariants of gapped 2D materials related to dissipationless thermoelectric transport at low temperatures. We give both macroscopic and microscopic arguments showing that thermoelectric transport coefficients vanish in the limit of zero temperature and thus topological invariants arise only from the electric Hall conductance and the thermal Hall conductance. Our arguments apply to systems with arbitrarily strong interactions. We also show that there is no analog of the Thouless pump for entropy.
We show that the disappearance of the chemical potential jumps over the range of perpendicular magnetic fields at fixed integer filling factor in a double quantum well with a tunnel barrier is caused by the interaction-induced level merging. The distribution function in the merging regime is special in that the probability to find an electron with energy equal to the chemical potential is different for the two merged levels.
Recently, negative longitudinal and positive in-plane transverse magnetoresistance have been observed in most topological Dirac/Weyl semimetals, and some other topological materials. Here we present a quantum theory of intrinsic magnetoresistance for three-dimensional Dirac fermions at a finite and uniform magnetic field B. In a semiclassical regime, it is shown that the longitudinal magnetoresistance is negative and quadratic of a weak field B while the in-plane transverse magnetoresistance is positive and quadratic of B. The relative magnetoresistance is inversely quartic of the Fermi wave vector and only determined by the density of charge carriers, irrelevant to the external scatterings in the weak scattering limit. This intrinsic anisotropic magnetoresistance is measurable in systems with lower carrier density and high mobility. In the quantum oscillation regime a formula for the phase shift in Shubnikov-de Hass oscillation is present as a function of the mobility and the magnetic field, which is useful for experimental data analysis.
We study multielectron bubble phases in the $N=2$ and $N=3$ Landau levels in a high mobility GaAs/AlGaAs sample. We found that the longitudinal magnetoresistance versus temperature curves in the multielectron bubble region exhibit sharp peaks, irrespective of the Landau level index. We associate these peaks with an enhanced scattering caused by thermally fluctuating domains of a bubble phase and a uniform uncorrelated electron liquid at the onset of the bubble phases. Within the $N=3$ Landau level, onset temperatures of three-electron and two-electron bubbles exhibit linear trends with respect to the filling factor; the onset temperatures of three-electron bubbles are systematically higher than those of two-electron bubbles. Furthermore, onset temperatures of the two-electron bubble phases across $N=2$ and $N=3$ Landau levels are similar, but exhibit an offset. This offset and the dominant nature of the three-electron bubbles in the $N=3$ Landau level reveals the role of the short-range part of the electron-electron interaction in the formation of the bubbles.